IPA126N10N3GXKSA1

Vgs(th) (Max) @ Id:	3.5V @ 45µA
Package / Case:	TO-220-3 Full Pack
Supplier Device Package:	PG-TO220-FP
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	33W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	2500pF @ 50V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	35nC @ 10V
Series:	OptiMOS™
Rds On (Max) @ Id, Vgs:	12.6 mOhm @ 35A, 10V
Drive Voltage (Max Rds On, Min Rds On):	6V, 10V
Current - Continuous Drain (Id) @ 25°C:	35A (Tc)
Drain to Source Voltage (Vdss):	100V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Not For New Designs
Packaging:	Tube

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IntroductionIPA126N10N3GXKSA1 is the third-generation Single Field-Effect Transistor (FET) of the IPA series. This particular model has 10 mA capacity and integrated gate control, thus making it suitable for a variety of applications. The following sections will cover the various applications and the working principles behind them.ApplicationsIPA126N10N3GXKSA1 is used in a variety of application fields, such as automotive, industrial, and consumer electronics. In automotive applications, these FETs provide noise immunity and low on-state resistance for switching applications in engines, automotive starters, and other motorized systems.For industrial applications, IPA126N10N3GXKSA1 is used in instances where high power switching and reliability are required. This includes motor drivers, AC/DC convertors, solenoid drivers and relays, digital potentiometers, motor control, and contactless switches.In consumer electronics, the FETs are used as switching devices in audio amplifiers, digital dividers, monitors, printers and other peripheral devices.Working principlesIPA126N10N3GXKSA1 is constructed of two metal oxide semiconductor layers, with an n- region between them. The n-region is composed of electrons and holes, and it is sandwiched between the n-source and p-drain regions. The FET is electronically fabricated to allow for a control gate connecting these components, in order to oversee and manage the flow of current passing through them. This is accomplished by altering the voltage on the gate to create a potential barrier between the source and drain regions, thus controlling the amount of current passing through.When the gate voltage is placed at a positive value, the potential barrier is smashed and a conductive channel is formed between the source and the drain, allowing current to flow. The conductive property is maintained during a constant gate voltage above the threshold voltage, making it possible to control the current flow.When the gate voltage is below the threshold voltage, a depletion region forms, blocking the flow of current through the FET. Placing the gate at a negative voltage also depletes the large barrier, thus blocking the flow of current as well.ConclusionIPA126N10N3GXKSA1 is a third-generation single field-effect transistor with 10 mA capacity and integrated gate control. It can be used in various application fields such as automotive, industrial, and consumer electronics. Its working principle revolves around the usage of the established connection of a control gate by altering its voltage and forming a potential barrier between the source and drain to control the amount of current passing through.

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