Allicdata Part #: | IPA70R360P7SXKSA1-ND |
Manufacturer Part#: |
IPA70R360P7SXKSA1 |
Price: | $ 0.99 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 700V 12.5A TO220 |
More Detail: | N-Channel 700V 12.5A (Tc) 26.4W (Tc) Through Hole ... |
DataSheet: | IPA70R360P7SXKSA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | $ 0.90720 |
10 +: | $ 0.80262 |
100 +: | $ 0.63422 |
500 +: | $ 0.49184 |
1000 +: | $ 0.38829 |
Vgs(th) (Max) @ Id: | 3.5V @ 150µA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | PG-TO220 Full Pack |
Mounting Type: | Through Hole |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Power Dissipation (Max): | 26.4W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 517pF @ 400V |
Vgs (Max): | ±16V |
Gate Charge (Qg) (Max) @ Vgs: | 16.4nC @ 10V |
Series: | CoolMOS™ P7 |
Rds On (Max) @ Id, Vgs: | 360 mOhm @ 3A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 12.5A (Tc) |
Drain to Source Voltage (Vdss): | 700V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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FETs (Field Effect Transistors), also known as unipolar transistors, are a type of transistor commonly used in electronics. They are used in a variety of applications, from radio frequency amplification to power conversion circuits. The IPF70R360P7SXKSA1 is a FET designed for use in high voltage applications up to 600V.
A FET is different from a conventional bipolar transistor in that its main components are of a positive and a negative type. Its main purpose is to control the amount of current passing through a circuit connected to it. There are two main types of FETs, enhancement and depletion mode. The IPF70R360P7SXKSA1 FET is a depletion mode transistor.
The construction of the IPF70R360P7SXKSA1 FET consists of a source, a drain, a gate and a body. The source and drain are terminals from which current flow can be accessed. The gate acts as a switch, with the voltage applied to it determining the flow of current through the transistor. The body of the FET contains the components responsible for the depletion mode and is connected to the source.
The working principle of the IPF70R360P7SXKSA1 FET is based on depletion mode and is known as the negative resistance effect. Its operation is controlled by the voltage applied to the gate. When no voltage is applied, the transistor acts as an open switch, allowing no current to flow through it. When a voltage is applied to the gate, the concentration of electrons on the surface of the drain and source increases, which creates a barrier to the flow of current. The higher the voltage applied to the gate, the greater the barrier, thus reducing the amount of current flowing through the transistor.
The IPF70R360P7SXKSA1 is commonly used in high voltage applications, making it ideal for a variety of industrial, commercial and residential applications. It is mainly used in power conversion circuits, such as charging systems, inverters and solar panels. It is also used in radio frequency amplifiers and oscillators, as it can provide high levels of gain, frequency control and stability. Additionally, it can be used in radio frequency range applications, such as satellite communications and wireless network systems.
The IPF70R360P7SXKSA1 is a reliable and robust FET that can be used in a variety of applications. Its depletion mode operation, combined with its high voltage rating, makes it suitable for a variety of applications, from industrial and commercial to residential, making it a versatile option for a wide range of requirements.
The specific data is subject to PDF, and the above content is for reference
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