IPA70R450P7SXKSA1

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The IPa70R450P7SXKSA1 transistor is a field-effect transistor (FET) from the family of single MOSFETs. This type of transistor is a type of semiconductor device that uses an electrical field to control the current flowing through a gate with conductive channels. It works by creating a barrier between the drain and gate regions characteristics of which can be altered by varying the applied gate-source voltage.

The required IPa70R450P7SXKSA1 transistor is designed to operate across a range of operating temperatures, ranging from -55°C to 150°C. This is a volt-are device with an integration level of 5.5V. It has a total power dissipation of 758mW, a drain-source breakdown voltage of 450V, and a gate-source breakdown voltage of 60V.

The IPa70R450P7SXKSA1 transistors are used extensively in industrial applications utilizing ultra-high functionalities. The various application fields in which this specific type of transistor has seen a great deal of utilization include RF (Radio Frequency) power amplifier and microwave power amplifiers. Additionally, these transistors are also used in line drivers and other analog switches, as well as high-voltage power monitors and acoustic circuits.

The working principle of IPa70R450P7SXKSA1 transistors is based on the FET principle and comprises of a metal-oxide-semiconductor (MOS) gate region and drain/source regions. The applied voltage on the MOS gate region controls the conductivity of the drain/source regions. As the gate-source voltage increases, majority carriers start passing through the channel resulting in current flow. In this way, the building and breaking of the connection with the substrate can be achieved by changing the gate-source voltage.

The basic operating characteristics of the IPa70R450P7SXKSA1 transistors make it ideally suited for a range of different applications. The large drain-source breakdown voltage of 450V ensures that the device can handle large currents, while the small gate-source breakdown voltage of 60V ensures it can be used in applications that require low gate-source voltages. This transistor is also capable of 1.7A continuous drain current and 16A pulse with thermal impedance as low as achieved in just 3.2 ms. This makes it suitable for fast switching applications.

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