IPDD60R080G7XTMA1

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Transistors - FETs, MOSFETs - Single

IPDD60R080G7XTMA1 is a silicon N-Channel enhancement Mode MOSFET with a high voltage rating. It stores a high input impedance and low operating current that makes it well-suited in various applications such as switch mode power supplies, general-purpose voltage amplification and multiplexing, to name a few.

Application Field

IPDD60R080G7XTMA1 is mainly used in the power industry. It is a perfect choice for high current, high frequency, and high voltage applications. It can be used in power converter applications to switch voltages up to 600V, DC-DC converters, motor driver, class-D audio amplifier, and various power supply topologies. It is also frequently employed in applications related to analytical instrumentation, defense, aerospace and industrial controls among others.

Working Principle

IPDD60R080G7XTMA1 is a low-resistance, low gate-charge MOSFET created for high voltage use. It uses a novel high-voltage technology to offer high output voltage and low on-resistance capabilities. It includes parasitic diode created for high forward blocking voltage and it can handle high switching frequencies up to a maximum of 200kHz. In favor of this device also has the high temperature rating. It features ESD protection that acts like a safety measure against electrostatic discharge.

Its logic level gate characteristics make it compatible with both TTL and CMOS circuits, making it usable with a wide selection of digital platforms. The input signal goes through the power MOSFET where it is used to control the flow of current between the source and the drain. When a voltage signal applied to the gate of the MOSFET, it forms an inversion layer and when the signal is strong enough, the device turns fully on. The maximum drain current will be determined by the voltage drop across the device in this state.

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