Allicdata Part #: | IPDD60R150G7XTMA1TR-ND |
Manufacturer Part#: |
IPDD60R150G7XTMA1 |
Price: | $ 1.38 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET NCH 650V 45A PG-HDSOP-10 |
More Detail: | N-Channel 600V 16A (Tc) 95W (Tc) Surface Mount PG-... |
DataSheet: | IPDD60R150G7XTMA1 Datasheet/PDF |
Quantity: | 1000 |
1700 +: | $ 1.25256 |
Vgs(th) (Max) @ Id: | 4V @ 260µA |
Package / Case: | 10-PowerSOP Module |
Supplier Device Package: | PG-HDSOP-10-1 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 95W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 902pF @ 400V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 23nC @ 10V |
Series: | CoolMOS™ G7 |
Rds On (Max) @ Id, Vgs: | 150 mOhm @ 5.3A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 16A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The IPDD60R150G7XTMA1 is a single N-Channel enhancement-mode metal-oxide-silicon field effect transistor commonly used in a variety of electronic circuits. It is best known for its low on-state resistance and high switching performance. The IPDD60R150G7XTMA1 is a wideband transistor that operates in a wide voltage range and has a high maximum operating temperature.
The IPDD60R150G7XTMA1 has a drain current capacity of 60 amps, a source-drain voltage of 150 volts, and a drain-source cutoff voltage of 7 volts. The gate-source on-voltage is 5 volts and the gate-source capacitance is 600 pF. It has a frequency up to 200 MHz and a power dissipation of 14 watts. The IPDD60R150G7XTMA1 is packaged in a TO-252 package with a maximum operating temperature range of -55 to +150 degrees Celsius.
The IPDD60R150G7XTMA1 is an ideal choice for applications that require low on-state resistance and high switching performance, such as in power management applications that require high efficiency, or in switch-mode power supplies that require fast switching action. It is also used in motor driving, low dropout voltage regulators and other applications where high current capacity and low on-resistance are desired.
The working principle of a MOSFET is based on the flow of electrons between a source and a drain. When a voltage is applied to the gate terminal, it changes the electric-field permeability of the device in order to control the flow of electrons between the source and drain. The IPDD60R150G7XTMA1 is an enhancement-mode transistor, which means that a positive voltage applied to the gate will increase the current flow between the source and drain, while a negative voltage will decrease the current flow.
The IPDD60R150G7XTMA1 is an ideal choice for applications that require low on-state resistance and high switching performance. It is also suitable for applications that require low power dissipation and high frequency operation. The IPDD60R150G7XTMA1 is an efficient, reliable and robust transistor that can be used in a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
IPDD60R190G7XTMA1 | Infineon Tec... | 1.08 $ | 1000 | MOSFET NCH 650V 36A PG-HD... |
IPDD60R080G7XTMA1 | Infineon Tec... | 2.71 $ | 1000 | MOSFET NCH 650V 83A PG-HD... |
IPDD60R150G7XTMA1 | Infineon Tec... | 1.38 $ | 1000 | MOSFET NCH 650V 45A PG-HD... |
IPDD60R125G7XTMA1 | Infineon Tec... | 1.67 $ | 1000 | MOSFET NCH 650V 54A PG-HD... |
IPDD60R050G7XTMA1 | Infineon Tec... | 4.14 $ | 1000 | MOSFET NCH 650V 135A PG-H... |
IPDD60R102G7XTMA1 | Infineon Tec... | 2.15 $ | 1000 | MOSFET NCH 650V 66A PG-HD... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
MOSFET N-CH 800V 9A TO-268N-Channel 800V...