IPDD60R150G7XTMA1 Allicdata Electronics
Allicdata Part #:

IPDD60R150G7XTMA1TR-ND

Manufacturer Part#:

IPDD60R150G7XTMA1

Price: $ 1.38
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET NCH 650V 45A PG-HDSOP-10
More Detail: N-Channel 600V 16A (Tc) 95W (Tc) Surface Mount PG-...
DataSheet: IPDD60R150G7XTMA1 datasheetIPDD60R150G7XTMA1 Datasheet/PDF
Quantity: 1000
1700 +: $ 1.25256
Stock 1000Can Ship Immediately
$ 1.38
Specifications
Vgs(th) (Max) @ Id: 4V @ 260µA
Package / Case: 10-PowerSOP Module
Supplier Device Package: PG-HDSOP-10-1
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 95W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 902pF @ 400V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Series: CoolMOS™ G7
Rds On (Max) @ Id, Vgs: 150 mOhm @ 5.3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The IPDD60R150G7XTMA1 is a single N-Channel enhancement-mode metal-oxide-silicon field effect transistor commonly used in a variety of electronic circuits. It is best known for its low on-state resistance and high switching performance. The IPDD60R150G7XTMA1 is a wideband transistor that operates in a wide voltage range and has a high maximum operating temperature.

The IPDD60R150G7XTMA1 has a drain current capacity of 60 amps, a source-drain voltage of 150 volts, and a drain-source cutoff voltage of 7 volts. The gate-source on-voltage is 5 volts and the gate-source capacitance is 600 pF. It has a frequency up to 200 MHz and a power dissipation of 14 watts. The IPDD60R150G7XTMA1 is packaged in a TO-252 package with a maximum operating temperature range of -55 to +150 degrees Celsius.

The IPDD60R150G7XTMA1 is an ideal choice for applications that require low on-state resistance and high switching performance, such as in power management applications that require high efficiency, or in switch-mode power supplies that require fast switching action. It is also used in motor driving, low dropout voltage regulators and other applications where high current capacity and low on-resistance are desired.

The working principle of a MOSFET is based on the flow of electrons between a source and a drain. When a voltage is applied to the gate terminal, it changes the electric-field permeability of the device in order to control the flow of electrons between the source and drain. The IPDD60R150G7XTMA1 is an enhancement-mode transistor, which means that a positive voltage applied to the gate will increase the current flow between the source and drain, while a negative voltage will decrease the current flow.

The IPDD60R150G7XTMA1 is an ideal choice for applications that require low on-state resistance and high switching performance. It is also suitable for applications that require low power dissipation and high frequency operation. The IPDD60R150G7XTMA1 is an efficient, reliable and robust transistor that can be used in a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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