IPDH4N03LAG Allicdata Electronics
Allicdata Part #:

IPDH4N03LAGINTR-ND

Manufacturer Part#:

IPDH4N03LAG

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 25V 90A TO252-3-11
More Detail: N-Channel 25V 90A (Tc) 94W (Tc) Surface Mount PG-T...
DataSheet: IPDH4N03LAG datasheetIPDH4N03LAG Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2V @ 40µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: PG-TO252-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 94W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3200pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 5V
Series: OptiMOS™
Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 60A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Drain to Source Voltage (Vdss): 25V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The IPDH4N03LAG is a state-of-the-art single-MOSFET chip. This high voltage component is designed to provide an extremely high level of integration into a small form factor, resulting in an extremely high switching efficiency. This component is especially suited for applications requiring fast switching times and wide power ratings. The component is also suitable for a wide range of applications, from audio and automotive to industrial control and power management.

The component has a built-in N-type MOSFET die that functions as a high voltage switching device. The die is made from a silicon substrate, allowing for very high switching speeds. The component also features an integrated gate resistor, which provides low output so that the MOSFET can be driven in a high/low switching state. The component also features an on-chip protection diode that guards against over-voltage and current spikes.

The component is designed with a dual-gate architecture, allowing it to be used to create non-linear wave shapes such as sawtooth and sine wave forms. It is also able to be stacked or cascaded in order to increase the output current or voltage to a higher value. The component can be used to control digital devices, such as digital pot, analog voltage or current sources, and can also be used to drive loads such as motors and transistors.

The working principle of IPDH4N03LAG can be described as follows: when the gate voltage is applied, the drain voltage becomes higher (than the gate voltage), allowing electrons to flow from the source to the drain. This process is referred to as drain-induced barrier lowering (DIBL). The channel width of the MOSFET increases, reducing the channel resistance, resulting in an increase in current flow. The voltage across the gates, is determined by the drain-source voltage and the gate capacitance. This voltage applied to the MOSFET determines the current which will flow through the component.

The IPDH4N03LAG component is ideal for a wide range of applications that require fast switching speeds and high power ratings. It can be used in digital control and regulation systems, motor drives, audio and automotive, and many other applications. Additionally, it can be used to create non-linear waveforms, providing a versatile range of control options. The component is extremely reliable and easy to use, making it an ideal choice for anyone looking for a high-performance MOSFET component.

The specific data is subject to PDF, and the above content is for reference

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