| Allicdata Part #: | IPDH5N03LAG-ND |
| Manufacturer Part#: |
IPDH5N03LA G |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 25V 50A DPAK |
| More Detail: | N-Channel 25V 50A (Tc) 83W (Tc) Surface Mount PG-T... |
| DataSheet: |  IPDH5N03LA G Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | OptiMOS™ |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Obsolete |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 25V |
| Current - Continuous Drain (Id) @ 25°C: | 50A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs: | 5.2 mOhm @ 50A, 10V |
| Vgs(th) (Max) @ Id: | 2V @ 35µA |
| Gate Charge (Qg) (Max) @ Vgs: | 22nC @ 5V |
| Vgs (Max): | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds: | 2653pF @ 15V |
| FET Feature: | -- |
| Power Dissipation (Max): | 83W (Tc) |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | PG-TO252-3 |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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The IPDH5N03LA G is a single N-Channel trench MOS Field Effect Transistor (FET) that is highly efficient and low-cost. It is specifically designed to provide high-current and high-speed switching operations in many different types of applications.
The IPDH5N03LA G has a number of unique features that make it an ideal choice for specific types of applications. It is capable of handling operating voltages up to 30V and allowing power losses of only 10mW, making it a highly efficient option. Additionally, the IPDH5N03LA G has a maximum current rating of over 5A, making it suited to applications with high current requirements. It also features high-speed switching performance with a switching speed of up to 3V/ns.
The IPDH5N03LA G is typically used in a wide range of applications such as high-speed switching applications, power amplifiers, power supplies, and power source management. Its low-cost and high efficiency make it a popular choice for these types of applications. It is also used in applications such as temperature sensing, power measurement, and signal processing circuits.
The IPDH5N03LA G works by using the principle of the MOSFET transistor. This essentially means that the transistor uses the majority of its gate capacitance to control the current that passes through the channel. This makes the FET very accurate in its switching ability, allowing significant power savings and improved efficiency in applications.
The IPDH5N03LA G is versatile and can be used in a number of different combinations to achieve different results. For example, it can be used in combination with a diode to create an enhanced conducting channel between two different voltages. This allows for greater control of current and enables the FET to function more effectively in applications that require precise control of current. Additionally, the IPDH5N03LA G can be used in combination with other components to create a bipolar or unipolar type of FET.
The IPDH5N03LA G is a highly efficient and reliable FET that is capable of providing high-current and high-speed switching operations. It is suitable for a wide range of applications and can be used in combination with other components to create different results. As such, it can be a great choice for any application that requires high current and high-speed switching. operations.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
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