IPN95R1K2P7ATMA1

Vgs(th) (Max) @ Id:	3.5V @ 140µA
Package / Case:	SOT-223-3
Supplier Device Package:	PG-SOT223
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	7W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	478pF @ 400V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	15nC @ 10V
Series:	CoolMOS™ P7
Rds On (Max) @ Id, Vgs:	1.2 Ohm @ 2.7A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	6A (Tc)
Drain to Source Voltage (Vdss):	950V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction

IPN95R1K2P7ATMA1 is a single-surface-mounted transistor that is widely used in a variety of applications. It is a four-pin MOSFET that offers excellent performance and reliability. The IPN95R1K2P7ATMA1 is part of the family of IPN95 transistors, which are based on the latest technology.This transistor has a sleek design and is extremely small in size, making it very attractive for use in high-density applications. It also offers high power efficiency, as well as excellent noise immunity, making it ideal for use in RF and digital applications.

Application Field

TheIPN95R1K2P7ATMA1 can be used in a variety of applications, including motor control, switching, pulse-width modulation, and audio switching. It can also be used in power supply circuits, in voltage regulated power supplies, and in data acquisition systems. It is also well suited for use in automotive applications, including engine and ignition control, speed control, cruise control, and fuel injection.In addition, the transistor\'s performance makes it ideal for use in power amplifiers, power supplies, LED drivers, LED lighting, and RF signaling. It can also be used in communications systems, such as Wi-Fi, Bluetooth, and Ethernet, and in data acquisition systems.

Working Principle

TheIPN95R1K2P7ATMA1 is a MOSFET, which stands for Metal Oxide Semiconductor Field-Effect Transistor. It is a special type of transistor that is used in many applications.The transistor is constructed from four layers: source, gate, drain, and substrate. The gate is composed of a thin layer of oxide and is used to control the amount of current that passes through the other three layers. When a voltage is applied to the gate, a gate capacitance is created that can control the amount of current that passes through the transistor.The source and drain layers are connected to the gate. When a voltage is applied to the gate, a current is created in the source and drain layers that can be controlled by the gate. This current can be either an electrical current (which is used in switching applications) or a magnetic field (which is used in power applications).The substrate is the last layer and acts as a control voltage. It is used to bias the source and drain layers. This allows the current in the source and drain layers to be accurately controlled by the gate.

Conclusion

TheIPN95R1K2P7ATMA1 is a single-surface-mounted transistor that is ideal for use in high-density applications where power efficiency and noise immunity are important considerations. It is suitable for use in many applications, including motor control, switching, pulse-width modulation, and audio switching, as well as in power supply circuits, in voltage regulated power supplies, and in data acquisition systems.Its construction consists of four layers: source, gate, drain, and substrate. The gate is composed of a thin layer of oxide and is used to control the amount of current that passes through the other three layers. The source and drain layers are connected to the gate, and the substrate acts as a voltage control to bias the source and drain layers. This allows the amount of current to be accurately controlled by the gate. Overall, theIPN95R1K2P7ATMA1 is an ideal choice for a variety of applications, due to its high power efficiency, excellent noise immunity, small size, sleek design, and low cost.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description