Allicdata Part #: | IPN95R2K0P7ATMA1TR-ND |
Manufacturer Part#: |
IPN95R2K0P7ATMA1 |
Price: | $ 0.29 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 950V 4A SOT223 |
More Detail: | N-Channel 950V 4A (Tc) 7W (Tc) Surface Mount PG-SO... |
DataSheet: | IPN95R2K0P7ATMA1 Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.26696 |
Vgs(th) (Max) @ Id: | 3.5V @ 80µA |
Package / Case: | SOT-223-3 |
Supplier Device Package: | PG-SOT223 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 7W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 330pF @ 400V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 10nC @ 10V |
Series: | CoolMOS™ P7 |
Rds On (Max) @ Id, Vgs: | 2 Ohm @ 1.7A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 4A (Tc) |
Drain to Source Voltage (Vdss): | 950V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The IPN95R2K0P7ATMA1 is a single N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) from International Rectifier. It is a power MOSFET that offers a new level of high-performance, high-reliability power switching and amplification for consumer, industrial, and automotive applications. This type of transistor is widely used in applications such as consumer electronics, automotive and general purpose power switching and amplification.
Application field
The IPN95R2K0P7ATMA1 transistor is widely used in consumer electronics, automotive and general purpose power switching and amplification applications because of its high performance and reliability. The IPN95R2K0P7ATMA1 can be used in high-power and high-current applications, such as in dc motors, relays, and solenoids. It can also be used for power management in applications such as solar power, wind turbines, and battery chargers. Moreover, the IPN95R2K0P7ATMA1 can be used in applications in which the load must be supplied with constant current, such as LED lighting, LCD displays, and other power-controlled applications. It can also be used to provide precision control in computer systems and data processing.
Working principle
The IPN95R2K0P7ATMA1 transistor works in the same way as other power MOSFETs; a small amount of current is used to control the switch. The transistor acts as a switch by allowing or preventing the flow of current across the device. When an appropriate gate voltage is applied to the gate of the transistor, the channel between the drain and the source becomes conductive, allowing current to pass from the drain to the source. When the gate voltage is decreased, the channel between the drain and the source becomes nonconductive, and the current flow is stopped.
The IPN95R2K0P7ATMA1 features a low on-state resistance (RDS which is usually measured at 25°C) at 4.2mΩ, making it an ideal choice for power amplification and switching applications. It also has a very low gate capacitance and a high switching speed, making it suitable for high-frequency applications such as Class D audio amplifiers, motor drives, and voltage regulators. Additionally, the IPN95R2K0P7ATMA1 has a low temperature coefficient, keeping its performance stable over a wide range of operating temperatures.
Conclusion
The IPN95R2K0P7ATMA1 is a single N-channel MOSFET from International Rectifier, which is ideal for high-power and high-current applications such as dc motors, relays, and solenoids. It offers a new level of high-performance, high-reliability power switching and amplification. This type of transistor is also suitable for power management in applications such as solar power, wind turbines, and battery chargers, as well as for precision control in computer systems and data processing. With its low on-state resistance, low gate capacitance, high switching speed, and low temperature coefficient, this power MOSFET is sure to provide reliable performance in your applications.
The specific data is subject to PDF, and the above content is for reference
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