IPP70N04S406AKSA1

Vgs(th) (Max) @ Id:	4V @ 26µA
Package / Case:	TO-220-3
Supplier Device Package:	PG-TO220-3-1
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	58W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	2550pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	32nC @ 10V
Series:	OptiMOS™
Rds On (Max) @ Id, Vgs:	6.5 mOhm @ 70A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	70A (Tc)
Drain to Source Voltage (Vdss):	40V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction

IPP70N04S406AKSA1 is a single-source, N-channel enhancement-mode MOSFET with an advanced and innovative structure. It has an extremely low on-resistance and high switching performance, making it suitable for high-efficiency and low-loss applications. This device has a low gate threshold voltage, high transconductance, and low gate-source capacitance, making it suitable for a wide range of applications.

Application Field

The IPP70N04S406AKSA1 is suitable for a variety of applications, including power converters, power management, motor control, DC-DC converters, power switches and alternative energy conversion. It has a low-power switch that is suitable for automotive applications, as well as high-efficiency power conversion due to its high transconductance and low on-resistance. This device also features low gate capacitance that is ideal for high-frequency switching applications.The IPP70N04S406AKSA1 is also suitable for LED lighting sources, LED backlighting, and HDTV power supplies, as it has a low threshold voltage to provide a high efficiency power conversion. Additionally, it can be used in “smart” home applications such as HVAC control, security systems, audio systems, and lighting control. These applications require a switch that can handle a wide range of voltages and currents.

Working Principle

The IPP70N04S406AKSA1 utilizes MOSFET technology, which involves employing a metal-oxide semiconductor to control the passage of current. The device has a channel composed of three terminals, source, gate, and drain. When a voltage is applied to the gate terminal, the current is allowed to flow between the source and drain. This voltage is commonly referred to as the threshold voltage. If the voltage is lower than the threshold voltage, no current will flow through the device.MOSFETs are widely used in analog and digital circuits due to their numerous advantages, such as their low switching noise, high speed, and low power dissipation per unit area. In addition, these devices are extremely robust and reliable due to their self-protection circuitry.

Conclusion

The IPP70N04S406AKSA1 is a single-source, N-channel enhancement-mode MOSFET with an advanced and innovative structure. Its low on-resistance and high switching performance makes it suitable for high-efficiency and low-loss applications. It has a wide range of applications, including power converters, power management, motor control, DC-DC converters, power switches, alternative energy conversion, LED lighting sources, LED backlighting, and HDTV power supplies. This device utilizes MOSFET technology, which involves employing a metal-oxide semiconductor to control the passage of current. MOSFETs are widely used in analog and digital circuits due to their numerous advantages, such as their low switching noise, high speed, and low power dissipation per unit area.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description