IPP70P04P409AKSA1 Allicdata Electronics
Allicdata Part #:

IPP70P04P409AKSA1-ND

Manufacturer Part#:

IPP70P04P409AKSA1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET P-CH TO220-3
More Detail: P-Channel 40V 72A (Tc) 75W (Tc) Through Hole PG-TO...
DataSheet: IPP70P04P409AKSA1 datasheetIPP70P04P409AKSA1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 120µA
Package / Case: TO-220-3
Supplier Device Package: PG-TO220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 75W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 4810pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
Series: Automotive, AEC-Q101, OptiMOS™
Rds On (Max) @ Id, Vgs: 9.4 mOhm @ 70A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The IPP70P04P409AKSA1 is a type of field effect transistor (FET) specifically a normally-off n-channel MOSFET with wide input voltage range and low on-state resistance. MOSFET is a commonly used electronic component, and applying them in various applications is fundamental to many industries. Consequently, understanding the device features, operation and application field of the IPP70P04P409AKSA1 is important for electrical engineering professionals.> Working PrincipleFETs are able to switch on and off electric current through a semiconductor-type material. The main difference between FETs and BJTs (bipolar junction transistors) is that the former does not require current to the base in order to activate the circuit, meaning that gate current input is only required to turn the device ON and OFF.Typically, MOSFETs come in two main types, p-channel and n-channel. The IPP70P04P409AKSA1 is an n-channel MOSFET, meaning the current flows through an n-type section within the device when the gate voltage is applied, allowing the device to turn off and regulate the current flow within the circuit.Furthermore, the device has an input voltage range of 4.5V to 24V and a RDS(on) of 0.421mΩ, allowing it to source at high current while operating in steady state.> Application FieldGiven its features, n-channel MOSFETs like the IPP70P04P409AKSA1 can be used to handle relatively high power (in excess of 100W) in applications such as audio amplifiers and battery-driven power supplies.General purpose N-channel MOSFETs are also often used in switching circuits, sensor circuits, and other related designs. For example, a basic N-channel MOSFET-based switching circuit consists of a transistor, a battery, a resistor, and a diode. When the input voltage to the battery is sufficiently high, the transistor will switch on, allowing current to flow through the circuit.Additionally, n-channel MOSFETs are advantageous over p-channel or BJT types in that they offer a simpler circuit topology in many applications, as well as shorter switching delays and thermally stable junction temperatures.The N-channel MOSFETs are commonly used in power management, solar power supply systems and current limit circuits due to their low RDS(on). For example, when using the IPP70P04P409AKSA1 in a battery-driven power supply system, its low RDS(on) ensures reliability and allows for efficient operation, since the device can perform without dissipating large amounts of heat.Finally, N-channel MOSFETs are also used in other high-power applications such as motor drives and LED lighting. Such applications require components with high current capacity and temperature stability, making the IPP70P04P409AKSA1 an ideal choice.In summary, the IPP70P04P409AKSA1 is a low-resistance n-channel MOSFET with wide input voltage range, making it ideally suited for high power applications such as audio amplifiers, power supplies, motor drives, and LED lighting. The device can be used in a variety of switching and current limit circuits, as well as in power management and solar power systems, thanks to its low RDS(on).

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