IPS105N03LGAKMA1 Allicdata Electronics
Allicdata Part #:

IPS105N03LGAKMA1-ND

Manufacturer Part#:

IPS105N03LGAKMA1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 30V 35A TO251-3
More Detail: N-Channel 30V 35A (Tc) 38W (Tc) Through Hole PG-TO...
DataSheet: IPS105N03LGAKMA1 datasheetIPS105N03LGAKMA1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Package / Case: TO-251-3 Stub Leads, IPak
Supplier Device Package: PG-TO251-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 38W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
Series: OptiMOS™
Rds On (Max) @ Id, Vgs: 10.5 mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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IPS105N03LGAKMA1 is a type of field effect transistor (FET) that generally falls under the category of single MOSFET. FETs are a type of transistor with three terminals and semi-conductor as its gate. In comparison with other FETs, single MOSFETS offer several advantages, such as voltage-controlled channel resistance and majority carrier control. A MOSFET transistor can be used as a switch, amplifier, or linear regulator. The IPS105N03LGAKMA1 has several important characteristics, including a maximum drain source voltage rating of 60 volts, a drain current rating of 14 Amps, a drain source on resistance of 3.3 milliohms, a gate threshold voltage of 1.9 volts, and a maximum junction temperature of 150degrees C.

The IPS105N03LGAKMA1 is an ideal choice for applications where both low power consumption and high efficiency are required. It is primarily designed for surface mount technology and for use in power management electronic systems such as PC motherboards, laptop computers and gaming systems. As compared to other traditional transistors, this particular mosfet is smaller, making it ideal for surface mount designs. Additionally, it is also relatively inexpensive and easy to use.

The working principle of the IPS105N03LGAKMA1 is based on the features associated with field-efficient transistors. A MOSFET consists of a conducting channel, a gate, a source, and a drain. When a small voltage is applied on the gate with respect to its source, then an electric field is induced in the channel, controlling the current between the source and the drain. This principle is used in order to bring about the desired electrical properties of the device. For example, when a voltage is applied through the gate terminal, the resistance of the conducting channel is modulated, allowing for the source to sink current from the drain.

In conclusion, the IPS105N03LGAKMA1 is a single MOSFET designed for surface mount technology enabled devices. It provides low power consumption and high efficiency. It has a drain source voltage rating of 60 volts and a drain current rating of 14 Amps. It is extremely versatile, with applications in power management systems such as PC motherboards, laptop computers and gaming systems. The working principle of the device is based on the features associated with field-efficient transistors.

The specific data is subject to PDF, and the above content is for reference

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