IPS118N10N G

Vgs(th) (Max) @ Id:	4V @ 83µA
Package / Case:	TO-251-3 Stub Leads, IPak
Supplier Device Package:	PG-TO251-3
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	125W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	4320pF @ 50V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	65nC @ 10V
Series:	OptiMOS™
Rds On (Max) @ Id, Vgs:	11.8 mOhm @ 75A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	75A (Tc)
Drain to Source Voltage (Vdss):	100V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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< html >< head >< title > Transistors - FETs, MOSFETs - Single - IPS118N10N G application field and working principle < /title >< /head >< body >< h2 > IPS118N10N G application field and working principle < /h2 >The IPS118N10N G Logic Level N-Channel enhancement mode MOSFET is intended for switching and linear applications. The device is designed with low on-state resistance and high switching speed for high efficiency and power density. This article will discuss its application fields and working principle.< h3 > Application fields < /h3 >The primary application areas for the IPS118N10N G include:< ul >< li > DC-DC converter < /li >< li > DC motor control < /li >< li > General purpose switching < /li >< li > Line power switches < /li >< li > Low voltage load switches < /li >< li > Low voltage soft start < /li >< li > Power management < /li >< li > Reverse battery protection < /li >< li > Switch mode power supplies < /li >< /ul >The low on-state resistance and high switching speed of the IPS118N10N G make it suitable for use in applications such as power management and reverse battery protection. Additionally, its logic level gate drive capability makes it a great choice for applications requiring precise gate control and high-side switching.< h3 > Working principle < /h3 >The IPS118N10N G is a three-terminal electronic device with an active layer located between two insulated gate electrodes. It is an enhancement mode MOSFET, meaning that it is normally off when the gate voltage is below the threshold voltage and can be switched to an on state by increasing the gate voltage.When the gate voltage is low, electrons cannot tunnel from the source to the drain, preventing current from flowing from the source to the drain. When the gate voltage is increased above the threshold voltage, however, electrons can tunnel from the source to the drain, allowing current to flow from the source to the drain.The IPS118N10N G is designed with a low on-state resistance and a high switching speed, making it ideal for switching applications. Its logic level gate drive capability also makes it a great choice for applications requiring precise gate control.< /body >< /html >

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