IPS50R520CPAKMA1 Allicdata Electronics
Allicdata Part #:

IPS50R520CPAKMA1-ND

Manufacturer Part#:

IPS50R520CPAKMA1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 500V 7.1A TO251-3
More Detail: N-Channel 500V 7.1A (Tc) 66W (Tc) Through Hole PG-...
DataSheet: IPS50R520CPAKMA1 datasheetIPS50R520CPAKMA1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: PG-TO251-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 66W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 100V
Vgs (Max): ±20V
Series: CoolMOS™
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Rds On (Max) @ Id, Vgs: 520 mOhm @ 3.8A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 7.1A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Last Time Buy
Description

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The IPS50R520CPAKMA1 is a TrenchFET® power MOSFET transistor made by Infineon Technologies, the world’s largest automotive semiconductor supplier. This device is designed for use in low voltage applications such as computer power supplies and general purpose power switching.

The IPS50R520CPAKMA1 is a high frequency insulated-gate bipolar transistor (IGBT). It\'s design is ideal for high frequency applications, achieving higher switching speeds as well as low-loss operation and better noise immunity. With its low gate-to-drain and source-to-drain capacitance, this device offers high power density and improved efficiency.

The IPS50R520CPAKMA1 has a breakdown voltage of 15V and a maximum drain current of 6A, making it suitable for a wide range of applications. It is available in a package, which includes a resin molding and several wire leads that make it suitable for use in many applications.

The working principle of the IPS50R520CPAKMA1 is simple. When a voltage is applied between the gate and source terminals, the MOSFET is turned on. This allows current to flow from the source to the drain, allowing it to be used as a switch. The higher the gate voltage, the greater the current flow.The on-resistance of the IPS50R520CPAKMA1 is typically 0.450 Ω, so it can be used to control large currents with minimum loss.

The IPS50R520CPAKMA1 can be used in a variety of automated systems, such as motor control and power switching, as well as in consumer electronics such as display drivers, LED lighting, and audio amplifiers. It is also suitable for use in applications requiring high frequency switching, such as high power RF amplifiers and wireless base stations.

The IPS50R520CPAKMA1 is designed for low voltage applications, so it is important to choose the correct power supply and avoid overloads. It is also important to match the device to the application to ensure optimal performance. In addition, the device should be installed and mounted according to the manufacturer’s recommendations.

The IPS50R520CPAKMA1 is a reliable and cost-effective MOSFET transistor that is suitable for a variety of applications. With its low on-resistance and high frequency operation, it is a great choice for high power and wireless applications. It is easy to install and offers long-term reliability, making it a great choice for many applications.

The specific data is subject to PDF, and the above content is for reference

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