IPSH4N03LA G Allicdata Electronics
Allicdata Part #:

IPSH4N03LAG-ND

Manufacturer Part#:

IPSH4N03LA G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 25V 90A IPAK
More Detail: N-Channel 25V 90A (Tc) 94W (Tc) Through Hole PG-TO...
DataSheet: IPSH4N03LA G datasheetIPSH4N03LA G Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 2V @ 40µA
Package / Case: TO-251-3 Stub Leads, IPak
Supplier Device Package: PG-TO251-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 94W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3200pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 5V
Series: OptiMOS™
Rds On (Max) @ Id, Vgs: 4.4 mOhm @ 60A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Drain to Source Voltage (Vdss): 25V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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IPSH4N03LA G Application Field and Working Principle

The IPSH4N03LA G is a 30V, 4A, N-channel, surface-mount, ultra-low-on-resistance MOSFET. Based on the enhancement-type, vertical DMOS structure, the device switches and behaves like a low value resistor when it is turned on, providing better efficiency and improved performance. IPSH4N03LA G MOSFETs feature very low RDS(ON), high switching speed, low gate charge, low Vgs ringing, high drain current capability and excellent avalanche capability.

Application Fields

IPSH4N03LA G MOSFETs can be used in various applications, such as server power supplies, dc/dc converters, lighting, medical and industrial equipment. They can also be used in automotive and battery-powered applications, where energy efficiency and safety are critical. In addition, the MOSFETs can be used in many high-frequency applications, like cell phone power supplies and switched-mode power supplies (SMPS).

Working Principle

The IPSH4N03LA G MOSFET operates by controlling the flow of electrons between the source and drain terminals. When a high enough voltage is applied to the gate-source terminals, electrons are induced to flow from the source terminal to the channel region, creating an inversion channel. This inversion channel behaves like a low value resistor, allowing current to flow from the drain to the source. By controlling the voltage at the gate-source terminal, the flow of electrons can be controlled, allowing the operation of the MOSFET to be switched on and off.The IPSH4N03LA G works by increasing the current between the source and drain terminals while simultaneously reducing the input voltage, making it ideal for high-frequency switching applications. The MOSFET also features a high drain-source breakdown voltage, which helps prevent electrical breakdown during heavy loading.

Conclusion

The IPSH4N03LA G MOSFET is an efficient and reliable device for high-frequency switching applications. It offers low on-resistance and high current capability, making it well suited for use in a variety of applications, including automotive and server power supplies, dc/dc converters, lighting, medical, industrial, and battery-powered equipment. By controlling the flow of electrons, the IPSH4N03LA G can switch operations with improved efficiency and performance.

The specific data is subject to PDF, and the above content is for reference

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