| Allicdata Part #: | IPSH6N03LAG-ND |
| Manufacturer Part#: |
IPSH6N03LA G |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 25V 50A IPAK |
| More Detail: | N-Channel 25V 50A (Tc) 71W (Tc) Through Hole PG-TO... |
| DataSheet: |  IPSH6N03LA G Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 2V @ 30µA |
| Package / Case: | TO-251-3 Stub Leads, IPak |
| Supplier Device Package: | PG-TO251-3 |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 71W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2390pF @ 15V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 19nC @ 5V |
| Series: | OptiMOS™ |
| Rds On (Max) @ Id, Vgs: | 6.2 mOhm @ 50A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 50A (Tc) |
| Drain to Source Voltage (Vdss): | 25V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
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The IPSH6N03LA G is a device that belongs to the Transistors – FETs, MOSFETs – Single category. This device is a N-channel Power MOSFET manufactured by Advanced Power Semiconductor Technologies Inc.
MOSFET stands for Metal Oxide Semiconductor Field Effect Transistor. FETs are basically three-terminal electrical components made up of semiconductor material, which can either amplify or switch electrical signals. MOSFETs offer several advantages over other types of FETs, such as better current handling capability, lower power consumption, and better overall performance.
The IPSH6N03LA G is a high voltage power MOSFET that is used in various applications. It has a drain-source voltage of 600 Volts, and a continuous drain current of 8 Amps (at a case temperature of 25°C), making it suitable for use in high-power circuits. The maximum junction temperature of the IPSH6N03LA G is 175°C.
The IPSH6N03LA G is commonly used in power supply applications that require high efficiency and high current handling capability. It is used in switching mode power supplies, DC-DC converters, overvoltage protection circuits, gate drivers, and high power motor control applications.
The working principle of the IPSH6N03LA G is fairly simple. When an input voltage is applied to the gate terminal of the MOSFET, the electrolyte between the gate and the source forms a conducting channel, allowing current to flow from the source to the drain. The size of the conducting channel, and therefore the amount of current that is allowed to flow through the device, is proportional to the voltage applied to the gate terminal.
The IPSH6N03LA G is a robust device that is designed to withstand high voltages and currents in power supply and power control applications. The high current handling capability and efficiency of the device make it a useful choice for various power applications, such as DC-DC converters, switching mode power supplies, motor controllers, and overvoltage protection circuits.
The specific data is subject to PDF, and the above content is for reference
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