IPT012N08N5ATMA1

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The IPT012N08N5ATMA1 is a special type of transistor called a n-channel enhancement mode Mosfet (often shorted to MOSFET). It is designed to operate on a single voltage level, which makes it an excellent choice for a wide range of applications where single voltage operation is necessary. MOSFETs are often used as switches in digital and analog circuits, as they can provide efficient control of current and high switching speed. They can also be used in power supplies and other filtering applications.

A MOSFET is a three-terminal device made up of an active channel which connects the source and drain terminals. The application field for a MOSFET includes small analog and digital circuits, power switching circuits and audio amplifiers.

The IPT012N08N5ATMA1’s working principle is based on providing a flow of electrons between the source and drain terminals when a positive voltage is applied to the gate terminal. This positive voltage creates an electric field that repels or pulls away electrons within the device and creates a conducting channel between the source and drain. The current flow is then dependent on the magnitude and duration of the voltage applied to the gate terminal.

MOSFETs rely on charge carriers passing through an insulating gate layer or semiconductor layer. They are far more efficient than other transistor designs like bipolar junction transistors, as the gate voltage can be easily changed to control the current flow through the MOSFET. This makes them suitable for low power applications like remote control systems and for use as switches.

The IPT012N08N5ATMA1 is a single-voltage MOSFET with a drain-source breakdown voltage of 30V, a continuous drain current of 12A and a total gate charge of 19nC. It is capable of operating at temperatures of up to 175°C and has a low gate-source capacitance which makes it a good choice for fast switching applications. It is a reliable device with a long lifetime and has been proven to be a suitable choice for a wide range of applications.

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