
Allicdata Part #: | IPW80R280P7XKSA1-ND |
Manufacturer Part#: |
IPW80R280P7XKSA1 |
Price: | $ 2.64 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 800V 17A TO247 |
More Detail: | N-Channel 800V 17A (Tc) 101W (Tc) Through Hole TO-... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | $ 2.40030 |
10 +: | $ 2.14515 |
240 +: | $ 1.75896 |
720 +: | $ 1.42432 |
1200 +: | $ 1.20124 |
Vgs(th) (Max) @ Id: | 3.5V @ 360µA |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 101W (Tc) |
FET Feature: | Super Junction |
Input Capacitance (Ciss) (Max) @ Vds: | 1200pF @ 500V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 10nC @ 10V |
Series: | CoolMOS™ |
Rds On (Max) @ Id, Vgs: | 280 mOhm @ 7.2A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 17A (Tc) |
Drain to Source Voltage (Vdss): | 800V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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Introduction
The IPW80R280P7XKSA1 is a -channel enhancement-mode power MOSFET designed specifically for power management in portable applications. The device utilizes Advanced Trench Technology to achieve low RDS(on) and low gate charge. This results in a cost effective balance of performance, features and cost.
Application Field
Power management applications where space and power efficiency is essential, such as portable and handheld devices, laptop computers, notebook computers, tablet computers and other portable device applications, are a great fit for the IPW80R280P7XKSA1. This device can be used to manage the power factor correction circuit, reduce power supply noise and power consumption. Additionally, thanks to its flexibility, the device can be utilized in controlling the power switch of a Class-D amplifier, a boost converter, a hot-swap application, and also be used in a current source for LCD monitor.
Working Principle
The IPW80R280P7XKSA1 is an advanced form of MOSFET. It is designed so that when a voltage is applied to the gate, it opens up a channel between the drain and the source. This opens up the flow of electrons and creates a current in the drain-source. The result is that the voltage at the drain is lowered while the voltage at the source is increased. This in turn creates a power management system where the overall power consumption is lowered and the efficiency is improved.
Using the IPW80R280P7XKSA1 in a power management system requires some attention to the specifics of the device. One of the most important aspects is that the gate voltage needs to be carefully managed. The device is a very sensitive transistor device and too much voltage can lead to damage to the MOSFET. Additionally, the gate needs to be protected from any noise or interference, as noise can also damage the device. To ensure the best performance of the device, the gate should be operated at a low voltage and kept away from noisy or interference inducing environments.
The IPW80R280P7XKSA1 is well suited for use in portable devices and other power management applications. Thanks to its low power consumption and low gate charge, the device is a cost effective solution for controlling the power supplied to any device. Additionally, the device is quite durable and its low voltage operation helps ensure that it will last for a long time without any need for repair or maintenance.
The specific data is subject to PDF, and the above content is for reference
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