| Allicdata Part #: | IPW80R360P7XKSA1-ND |
| Manufacturer Part#: |
IPW80R360P7XKSA1 |
| Price: | $ 2.26 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 800V 13A TO247-3 |
| More Detail: | N-Channel 800V 13A (Tc) 84W (Tc) Through Hole PG-T... |
| DataSheet: |  IPW80R360P7XKSA1 Datasheet/PDF |
| Quantity: | 114 |
| 1 +: | $ 2.05380 |
| 10 +: | $ 1.83141 |
| 240 +: | $ 1.50156 |
| 720 +: | $ 1.21590 |
| 1200 +: | $ 1.02546 |
| Vgs(th) (Max) @ Id: | 3.5V @ 280µA |
| Package / Case: | TO-247-3 |
| Supplier Device Package: | PG-TO247-3 |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 84W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 930pF @ 500V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 30nC @ 10V |
| Series: | CoolMOS™ P7 |
| Rds On (Max) @ Id, Vgs: | 360 mOhm @ 5.6A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 13A (Tc) |
| Drain to Source Voltage (Vdss): | 800V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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MOSFET (metal-oxide-semiconductor field-effect transistor) is an electronic device used to control and amplify signals. The IPW80R360P7XKSA1 is a single N-channel MOSFET that can be used in a wide variety of applications. This article will explore the IPW80R360P7XKSA1 transistor\'s application field and working principle.
Application Field
The IPW80R360P7XKSA1 is a N-channel MOSFET that features high conductivity, low resistance and low voltage drop, making it ideal for a variety of power switching applications. These include LED drivers, motor controllers, power supplies and DC-DC converters. Additionally, the IPW80R360P7XKSA1 can also be used to control power for automotive, industrial, telecommunications and other applications.
Working Principle
The IPW80R360P7XKSA1 works by controlling the flow of current between the source and drain terminals. The MOSFET has a gate terminal which acts as a switch to control the flow of current. The gate is connected to the gate terminal, and is connected to the gate terminal through a gate oxide layer, which acts as an insulating layer.
When a voltage is applied to the gate terminal, current is allowed to flow between the source and drain terminal. The amount of current that can flow is dependent on the voltage applied to the gate terminal. By varying the voltage on the gate terminal, the current magnitude passing between the source and drain can be accurately regulated.
The IPW80R360P7XKSA1 is capable of handling currents up to 30A and its on-resistance is 0.030 ohms. It is capable of operating at a maximum voltage of 80V and can handle up to 360W of power. This makes it ideal for a variety of high power applications.
Conclusion
The IPW80R360P7XKSA1 MOSFET is ideal for applications that require high current and power handling capacities. It is capable of operating at voltages up to 80V and its on-resistance is 0.030 ohms. The MOSFET is perfect for motor controllers, power supplies, DC-DC converters and other power switching applications.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| IPW80R360P7XKSA1 | Infineon Tec... | 2.26 $ | 114 | MOSFET N-CH 800V 13A TO24... |
| IPW80R280P7XKSA1 | Infineon Tec... | 2.64 $ | 1000 | MOSFET N-CH 800V 17A TO24... |
| IPW80R290C3AFKSA1 | Infineon Tec... | 4.35 $ | 1000 | MOSFET N-CH 800V TO247 |
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