IPZ40N04S55R4ATMA1 Allicdata Electronics
Allicdata Part #:

IPZ40N04S55R4ATMA1TR-ND

Manufacturer Part#:

IPZ40N04S55R4ATMA1

Price: $ 0.27
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 8TDSON
More Detail: N-Channel 40V 40A (Tc) 48W (Tc) Surface Mount PG-T...
DataSheet: IPZ40N04S55R4ATMA1 datasheetIPZ40N04S55R4ATMA1 Datasheet/PDF
Quantity: 5000
5000 +: $ 0.24398
Stock 5000Can Ship Immediately
$ 0.27
Specifications
Vgs(th) (Max) @ Id: 3.4V @ 17µA
Package / Case: 8-PowerVDFN
Supplier Device Package: PG-TSDSON-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 48W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Series: Automotive, AEC-Q101, OptiMOS™
Rds On (Max) @ Id, Vgs: 5.4 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The IPZ40N04S55R4ATMA1 is a MOSFET, or Metal Oxide Semiconductor Field Effect Transistor, that is designed to operate in an industrial or commercial environment. This MOSFET is single-level, meaning that it can be used for switching applications and power control. In typical MOSFET technology, the transistor is made up of two types of materials, an insulator and a semiconductor. In the IPZ40N04S55R4ATMA1, those materials are silicon and silicon dioxide, respectively. The technology is formed by a structured thin film of the two materials. In order for current to flow through the transistor, a voltage has to be applied to the gate. This gate voltage is used to control the current flow, allowing for a high degree of accuracy in controlling current.

The IPZ40N04S55R4ATMA1 has a host of applications and can be used in a variety of industrial or commercial situations. Some of these applications include motor control, lighting control, power supplies, and data communication. It can also be used to control the speed of motors, change the intensity of lighting, as well as control the power supply to a device or system. Additionally, the device can also be used for high frequency control in data communication systems.

The IPZ40N04S55R4ATMA1 has a variety of features that make it a great choice for a number of applications. The MOSFET is able to handle the switching of currents more economically than mechanical switches, with power ranges from a few milliwatts to a few hundred watts. In addition, it has a high switching speed and can operate at frequencies of up to 12MHz. The device also has a low input capacitance of 0.16pF, making it ideal for high speed signal processing applications. Finally, the device has a high reverse blocking voltage of 44V, making it suitable for a variety of industrial and commercial applications.

The working principle behind the IPZ40N04S55R4ATMA1 is largely the same as any other MOSFET. This device works by having a voltage applied to the gate which then controls the current flow through the device. When the voltage is low, then the current is also low and when the voltage is high, the current is also high. In order to ensure accuracy, the voltage necessary to control the current should be between 2V and 10V. The IPZ40N04S55R4ATMA1 is also designed to handle peak currents within a certain range and it is important to observe these limits to ensure the device doesn\'t become damaged.

The IPZ40N04S55R4ATMA1 is an ideal choice for a variety of industrial and commercial applications because of the range of features and applicability it offers. It has a wide range of power handling capabilities, along with a high switching speed and low input capacitance. Its ability to handle high frequency control in data communication systems makes it particularly useful. Its ability to handle peak currents within a certain range is also a key feature and should be observed in order to avoid damaging the device.

The specific data is subject to PDF, and the above content is for reference

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