IPZ40N04S5L4R8ATMA1 Allicdata Electronics
Allicdata Part #:

IPZ40N04S5L4R8ATMA1TR-ND

Manufacturer Part#:

IPZ40N04S5L4R8ATMA1

Price: $ 0.27
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 8TDSON
More Detail: N-Channel 40V 40A (Tc) 48W (Tc) Surface Mount PG-T...
DataSheet: IPZ40N04S5L4R8ATMA1 datasheetIPZ40N04S5L4R8ATMA1 Datasheet/PDF
Quantity: 10000
5000 +: $ 0.24398
Stock 10000Can Ship Immediately
$ 0.27
Specifications
Vgs(th) (Max) @ Id: 2V @ 17µA
Package / Case: 8-PowerVDFN
Supplier Device Package: PG-TSDSON-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 48W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1560pF @ 25V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Series: Automotive, AEC-Q101, OptiMOS™
Rds On (Max) @ Id, Vgs: 4.8 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The IPZ40N04S5L4R8ATMA1 is a type of Power MOSFET, which is a specifically designed field effect transistor (FET) that is used in various types of applications. It is an n-channel, insulated gate, P-channel MOSFET that is based on silicon-on-insulator (SOI) technology. It is utilized in a wide range of applications and industries that range from telecommunications to energy management.

Power MOSFETs like the IPZ40N04S5L4R8ATMA1 are gaining popularity in the industrial and automotive sectors due to their increased performance, lower on-state resistance, and higher efficiency. These devices are normally used for controlling the transfer of power in switching applications, such as motor control, power conversion, and general power management.

The IPZ40N04S5L4R8ATMA1 is ideal for a variety of low voltage, high current applications that require fast switching. It is also well suited for DC-DC conversion and high frequency power applications. The device is typically used to manage current, voltage, and power and it helps to optimize system performance.

The IPZ40N04S5L4R8ATMA1 is a insulated-gate, triple diffused, MOSFET. It is also known as a depletion-mode FET as it relies upon the channel pinch off to control the current flow. It has a threshold voltage that is specified by the manufacturer and it is used to determine where the device will begin to operate. This voltage is typically within a range of 0.7V to 4V.

This MOSFET utilizes a high-voltage gate control method, which is designed for fast switching. It is also designed with integrated protection features that protect the device against thermal and electrical overstress. The device also has high performance switching capabilities and can handle high voltages and currents.

The IPZ40N04S5L4R8ATMA1 has a low on-state resistance and can be used for a variety of high current switching applications. It is also designed for high frequency power circuit applications, such as for AC-DC conversion, DC-DC conversion, and DC-AC conversion. The device also has low gate capacitance, which is important for high frequency applications.

The IPZ40N04S5L4R8ATMA1 is a highly efficient MOSFET that is designed for a variety of power management applications. It is used in applications where superior performance, low on-state resistance, and improved system efficiency are required. This power MOSFET can also be used for switching applications, such as motor control, power conversion, and general power management.

The specific data is subject to PDF, and the above content is for reference

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