
Allicdata Part #: | IPZ40N04S5L4R8ATMA1TR-ND |
Manufacturer Part#: |
IPZ40N04S5L4R8ATMA1 |
Price: | $ 0.27 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 8TDSON |
More Detail: | N-Channel 40V 40A (Tc) 48W (Tc) Surface Mount PG-T... |
DataSheet: | ![]() |
Quantity: | 10000 |
5000 +: | $ 0.24398 |
Vgs(th) (Max) @ Id: | 2V @ 17µA |
Package / Case: | 8-PowerVDFN |
Supplier Device Package: | PG-TSDSON-8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 48W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1560pF @ 25V |
Vgs (Max): | ±16V |
Gate Charge (Qg) (Max) @ Vgs: | 29nC @ 10V |
Series: | Automotive, AEC-Q101, OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 4.8 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 40A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The IPZ40N04S5L4R8ATMA1 is a type of Power MOSFET, which is a specifically designed field effect transistor (FET) that is used in various types of applications. It is an n-channel, insulated gate, P-channel MOSFET that is based on silicon-on-insulator (SOI) technology. It is utilized in a wide range of applications and industries that range from telecommunications to energy management.
Power MOSFETs like the IPZ40N04S5L4R8ATMA1 are gaining popularity in the industrial and automotive sectors due to their increased performance, lower on-state resistance, and higher efficiency. These devices are normally used for controlling the transfer of power in switching applications, such as motor control, power conversion, and general power management.
The IPZ40N04S5L4R8ATMA1 is ideal for a variety of low voltage, high current applications that require fast switching. It is also well suited for DC-DC conversion and high frequency power applications. The device is typically used to manage current, voltage, and power and it helps to optimize system performance.
The IPZ40N04S5L4R8ATMA1 is a insulated-gate, triple diffused, MOSFET. It is also known as a depletion-mode FET as it relies upon the channel pinch off to control the current flow. It has a threshold voltage that is specified by the manufacturer and it is used to determine where the device will begin to operate. This voltage is typically within a range of 0.7V to 4V.
This MOSFET utilizes a high-voltage gate control method, which is designed for fast switching. It is also designed with integrated protection features that protect the device against thermal and electrical overstress. The device also has high performance switching capabilities and can handle high voltages and currents.
The IPZ40N04S5L4R8ATMA1 has a low on-state resistance and can be used for a variety of high current switching applications. It is also designed for high frequency power circuit applications, such as for AC-DC conversion, DC-DC conversion, and DC-AC conversion. The device also has low gate capacitance, which is important for high frequency applications.
The IPZ40N04S5L4R8ATMA1 is a highly efficient MOSFET that is designed for a variety of power management applications. It is used in applications where superior performance, low on-state resistance, and improved system efficiency are required. This power MOSFET can also be used for switching applications, such as motor control, power conversion, and general power management.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
IPZ40N04S5L4R8ATMA1 | Infineon Tec... | 0.27 $ | 10000 | MOSFET N-CH 8TDSONN-Chann... |
IPZ40N04S55R4ATMA1 | Infineon Tec... | 0.27 $ | 5000 | MOSFET N-CH 8TDSONN-Chann... |
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