IR2011PBF Allicdata Electronics
Allicdata Part #:

IR2011PBF-ND

Manufacturer Part#:

IR2011PBF

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Infineon Technologies
Short Description: IC DRIVER HIGH/LOW SIDE 8-DIP
More Detail: Half-Bridge Gate Driver IC Inverting 8-DIP
DataSheet: IR2011PBF datasheetIR2011PBF Datasheet/PDF
Quantity: 2827
Stock 2827Can Ship Immediately
Specifications
Current - Peak Output (Source, Sink): 1A, 1A
Base Part Number: IR2011PBF
Supplier Device Package: 8-DIP
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Rise / Fall Time (Typ): 35ns, 20ns
High Side Voltage - Max (Bootstrap): 200V
Input Type: Inverting
Series: --
Logic Voltage - VIL, VIH: 0.7V, 2.2V
Voltage - Supply: 10 V ~ 20 V
Gate Type: N-Channel MOSFET
Number of Drivers: 2
Channel Type: Independent
Driven Configuration: Half-Bridge
Part Status: Active
Packaging: Tube 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

.

Introduction

IR2011PBF is a three-phase gate driver IC designed for use in high power applications. It integrates the design of three pulse-width modulation (PWM) and low-side drivers into one chip. This gate driver IC provides efficient, reliable and robust control over three power MOSFETs, helping to reduce applications complexity and cost.

Application Field

The IR2011PBF gate driver IC is a versatile solution that is suitable for many power management applications. It is ideal for high power motor drives, server applications, power supplies, solar power inverters and motor control, among others. It supports both synchronous and asynchronous modes and, when combined with its PWM input, delivers precision control and synchronization of up to three PWM phases.

Working Principle

The IR2011PBF is a three-phase high power gate driver IC that can drive up to three high power MOSFETs at once. It consists of three PWM inputs that are responsible for controlling the conduction and switching of the three MOSFETs. The PWM signals are generated from an A/D converter and used to drive the three internal power switches. The power control device is controlled by the onboard control logic that performs all the necessary sequencing for high speed and power control.The IR2011PBF IC utilizes current sensing to monitor the current passing through the MOSFETs. This technique provides real time monitoring information that helps to avoid over-current conditions and ensures that the IC is working properly. Additionally, it helps to improve reliability.

Conclusion

The IR2011PBF three-phase gate driver IC is a versatile solution for many power management applications. It combines a three-phase PWM and low-side driver in one device, providing efficient, reliable and robust control of up to three power MOSFETs. In addition, it supports both synchronous and asynchronous modes, current sensing and real time monitoring, thus ensuring accurate control and increased reliability.

The specific data is subject to PDF, and the above content is for reference

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