Allicdata Part #: | IR2011SPBF-ND |
Manufacturer Part#: |
IR2011SPBF |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Infineon Technologies |
Short Description: | HI/LO SIDE DRVR 8SOIC |
More Detail: | Half-Bridge Gate Driver IC Inverting 8-SOIC |
DataSheet: | IR2011SPBF Datasheet/PDF |
Quantity: | 385 |
Current - Peak Output (Source, Sink): | 1A, 1A |
Base Part Number: | IR2011SPBF |
Supplier Device Package: | 8-SOIC |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Mounting Type: | Surface Mount |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Rise / Fall Time (Typ): | 35ns, 20ns |
High Side Voltage - Max (Bootstrap): | 200V |
Input Type: | Inverting |
Series: | -- |
Logic Voltage - VIL, VIH: | 0.7V, 2.2V |
Voltage - Supply: | 10 V ~ 20 V |
Gate Type: | N-Channel MOSFET |
Number of Drivers: | 2 |
Channel Type: | Independent |
Driven Configuration: | Half-Bridge |
Part Status: | Active |
Packaging: | Tube |
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IR2011SPBF (Insulated Gate Bipolar Transistor or IGBT) is an integrated circuit used mainly in the power module industry. It is a voltage-mode PWM gate driver that allows the control of an external power transistor to offer the highest efficiency and the lowest power dissipation. IR2011SPBF promises superior performance and superior reliability in a single package.The IR2011SPBF is an effective gate driver used to control the power flows in many power interface applications. It has built-in blocking diode and provides preventative protection against reverse voltage and short circuits, as well as a functional shutdown feature. Its design allows it to drive a large number of power devices in high power modules, including IGBTs and MOSFETs.The working principle of IR2011SPBF is mainly based on two main components, the main switch and the main load. The main switch is one of the major components of the power device, which is responsible for the control and the driving function of the power device. The output voltage of the power supply is controlled by the main switch, which can be set to be proportional to the input voltage. The main load plays an important role in making the power device’s behavior predictable and consistent, which is mainly done by controlling the input and output current. The main load can be either resistive, inductive, or capacitive in nature.The main switch can be either a transistor or a metal-oxide semiconductor (MOSFET). In the case of a transistor, the main switch consists of three terminals: the drain, the gate, and the source. The drain or source act as the input and output terminals of the power device. The power device can be switched on and off by applying a voltage or current to the gate terminal. Similarly, in the case of a MOSFET, the three terminals - the drain, gate, and source - act as the input and output terminals as well. The gate voltage can be applied to control the power device on and off and also to adjust the load current and output voltage.The IR2011SPBF is designed to be a low-power and cost-effective solution that can be used in a wide range of applications. Its blocking diode provides a robust solution against reverse voltages, making it highly reliable and suitable for many demanding applications. Its low input and output drive current levels allow for smaller and lower power designs. The compact packaging makes it easier to integrate into existing power module designs, removing the need for bulky and expensive components.In summary, IR2011SPBF is a cost-effective, reliable and simple gate-driver designed for use in a wide array of power interface applications. It provides a highly efficient control of power devices, prevents reverse-current and short-circuit protection and features shutdown functionality. With its low power and cost profile, IR2011SPBF is a great way to quickly and conveniently update existing power module designs.
The specific data is subject to PDF, and the above content is for reference
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