IR2110-2PBF Allicdata Electronics
Allicdata Part #:

IR2110-2PBF-ND

Manufacturer Part#:

IR2110-2PBF

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Infineon Technologies
Short Description: IC DRIVER HIGH/LOW SIDE 14-DIP
More Detail: Half-Bridge Gate Driver IC Non-Inverting 16-PDIP
DataSheet: IR2110-2PBF datasheetIR2110-2PBF Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Current - Peak Output (Source, Sink): 2A, 2A
Base Part Number: IR2110-2PBF
Supplier Device Package: 16-PDIP
Package / Case: 16-DIP (0.300", 7.62mm), 14 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Rise / Fall Time (Typ): 25ns, 17ns
High Side Voltage - Max (Bootstrap): 500V
Input Type: Non-Inverting
Series: --
Logic Voltage - VIL, VIH: 6V, 9.5V
Voltage - Supply: 3.3 V ~ 20 V
Gate Type: IGBT, N-Channel MOSFET
Number of Drivers: 2
Channel Type: Independent
Driven Configuration: Half-Bridge
Part Status: Obsolete
Packaging: Tube 
Description

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The IR2110-2PBF is a two-channel integrated circuit designed to drive high-power n-channel MOSFETs and IGBTs in applications such as motor control, inverters, and other power electronics applications. It is a high-voltage driver that can withstand up to 600V, making it suitable for use in higher voltage applications. The device combines two high-side and two low-side drivers, allowing for driving two N-channel MOSFETs with a single IC. It offers a high dV/dt withstand capability and has high current capability up to 2.4A.

The IR2110-2PBF is a two-channel gate driver for high-power MOSFETs and IGBTs. It can be used to drive two switching devices, such as two MOSFETs or two IGBTs or a combined device, such as an IGBT/MOSFET combined. It is suitable for motor drive applications and inverter designs, where high voltage and high current drive are required. A high-side and a low-side driver are included in the device. The high-side driver is designed to work with voltages up to 600V, while the low-side driver works with voltages up to 25V. The high-side driver has an adjustable turn-on threshold voltage, while the low-side driver has an output current limit.

The IR2110-2PBF gate driver uses an internal bootstrap diode to provide the high side an additional gate drive voltage, allowing the high-side driver to remain on longer and for higher voltage applications. The high-side driver also has an internal overcurrent protection that prevents the MOSFET from being damaged by short-circuit faults. The low-side driver has an adjustable current limit that prevents the FET from being damaged in the event of accidental short circuit conditions.

The IR2110-2PBF is a versatile device that can be used in a variety of applications. It can be used in motor drive and inverter designs, as well as in applications such as welding, solar inverters, UPS and AC-DC power supplies. It can also be used in AC-DC power control applications and in AC servo control applications. It is a robust device that is capable of handling high-current and high-voltage loads reliably.

In summary, the IR2110-2PBF is a two-channel gate driver IC designed to drive high-power n-channel MOSFETs and IGBTs in applications such as motor control, inverters, and other power electronics applications. It is designed to withstand up to 600V in higher voltage applications, and offers a high dV/dt withstand capability and high current capability up to 2.4A. The device combines two high-side and two low-side drivers, offering a wide range of uses in various power supply, motor drive, and inverter applications.

The specific data is subject to PDF, and the above content is for reference

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