Allicdata Part #: | IR2117SPBFTR-ND |
Manufacturer Part#: |
IR2117STRPBF |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Infineon Technologies |
Short Description: | IC MOSFET DRIVER 1CHANNEL 8SOIC |
More Detail: | High-Side Gate Driver IC Non-Inverting 8-SOIC |
DataSheet: | IR2117STRPBF Datasheet/PDF |
Quantity: | 2500 |
Current - Peak Output (Source, Sink): | 250mA, 500mA |
Base Part Number: | IR2117SPBF |
Supplier Device Package: | 8-SOIC |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Mounting Type: | Surface Mount |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Rise / Fall Time (Typ): | 80ns, 40ns |
High Side Voltage - Max (Bootstrap): | 600V |
Input Type: | Non-Inverting |
Series: | -- |
Logic Voltage - VIL, VIH: | 6V, 9.5V |
Voltage - Supply: | 10 V ~ 20 V |
Gate Type: | IGBT, N-Channel MOSFET |
Number of Drivers: | 1 |
Channel Type: | Single |
Driven Configuration: | High-Side |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The IR2117STRPBF is a silicon-germanium power-switching device that is designed for high-frequency applications. It is a member of the IR Power Management System (PMIC) Gate Drivers family, combining a high low-side gate driver, an integrated power MOSFET and an integrated high-side gate driver within the same package to enable the switching of the power supply while providing excellent regulation. The device is ideally suited for applications such as dc-to-dc voltage regulators, switched-mode power supplies, and high-frequency DC-DC converters.
The IR2117STRPBF provides a high-side gate drive that is capable of driving a N-channel MOSFET to high-power levels with a voltage range up to 60V. The high-side gate driver has a true energy-efficient power-switching performance for low-ADC switching costs. The interrupt protection circuit prevents any chance of ESD damage during start-up sequentials. The driver is protected from reverse polarity, EFT, and high-dV/dt. The built-in feedback transistor compensates for the losses due to the switching of MOSFET on the high-side. It is built with the same process that is used to make the most reliable devices, making it suitable for high-end industrial and automotive applications.
The integrated low-side gate driver features both a low-side driver and over-current protection circuit. The two-stage driver has a wide range of operating frequency up to 2.2MHz, which allows for high-end PWM applications. It operates over the voltage range of 4V to 16V and its wide output voltage range up to 15V makes it suitable for a variety of applications. The low-side driver includes a slew rate control circuit to reduces EMI and is capable of driving a N-channel MOSFET up to 6A.
The device is designed to operate over a wide temperature range of -40°C to +125°C and is tested and rated for up to 150°C. The low-side gate driver has a low-on-resistance of 0.65ohm, which ensures maximum efficiency when sourcing from a 5V supply. It is available in various package sizes ranging from 3mm x 3mm to 17mm x 23mm, depending on the application and power requirements. The device also features a built-in watch-dog timer for additional protection.
The IR2117STRPBF is suitable for a wide range of applications, from automotive applications to industrial equipment, due to its high-end power-switching performance and reliability. The integrated gate drivers provide the necessary protection and switching performance to ensure a stable and efficient design. The integrated MOSFETs, low RDS(on) resistance and wide operating temperature range makes the IR2117STRPBF the perfect solution for a variety of power system applications, enabling reliable operation and maximum efficiency.
The specific data is subject to PDF, and the above content is for reference
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