IR2101STR Allicdata Electronics
Allicdata Part #:

IR2101STR-ND

Manufacturer Part#:

IR2101STR

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Infineon Technologies
Short Description: IC DRIVER HIGH/LOW SIDE 8-SOIC
More Detail: Half-Bridge Gate Driver IC Non-Inverting 8-SOIC
DataSheet: IR2101STR datasheetIR2101STR Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Current - Peak Output (Source, Sink): 210mA, 360mA
Base Part Number: IR2101S
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Rise / Fall Time (Typ): 100ns, 50ns
High Side Voltage - Max (Bootstrap): 600V
Input Type: Non-Inverting
Series: --
Logic Voltage - VIL, VIH: 0.8V, 3V
Voltage - Supply: 10 V ~ 20 V
Gate Type: IGBT, N-Channel MOSFET
Number of Drivers: 2
Channel Type: Independent
Driven Configuration: Half-Bridge
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The IR2101STR is a dual high and low side driver with a high 2.5A peak output current designed for driving photoMOS and other high speed switching applications. This article will provide an overview of the IR2101STR application field and working principle.

Application Field and Features of IR2101STR

The IR2101STR is a dual high and low side driver that is designed for use in power management applications such as distributed power systems and battery powered applications. It is a useful device for controlling the switching of power semiconductor switches such as MOSFETs and IGBTs. The IR2101STR is built with a two-stage circuit design, which provides efficient operation with very low quiescent current draw.The IR2101STR offers several features such as short circuit and overload protection, fast switching speeds and constant on-time control. The device also features under-voltage protection, which prevents the high side switch from opening if the input supply is below the minimum operating voltage. This is useful for preventing damage to the device and the system due to a power failure or other transient event.

Working Principle of IR2101STR

The IR2101STR operates by rapidly changing the high and low side transistors in response to the input control signal. When the control signal is low, the high side transistor is off and the low side transistor is on, connecting the load and the output line together. When the control signal is high, the high side transistor is on and the low side transistor is off, disconnecting the output line from the load. The speed of the switching cycle is determined by the switching frequency of the device, which can be adjusted by changing the external components. When the device is in operation, the high and low side transistors are switched in rapid succession, allowing the energy stored in the output capacitor to be transferred to the load in the same manner as an inductor. This reduces the amount of energy lost to internal resistance, allowing for higher efficiency and power delivery.

Conclusion

In conclusion, the IR2101STR is a useful power management device for controlling the switching of power semiconductor devices, and offers several features such as short-circuit protection, fast switching speed and under-voltage protection. The device operates using a two-stage circuit design which allows for efficient operation and fast switching speeds. This makes the device suitable for use in distributed power systems and battery powered applications.

The specific data is subject to PDF, and the above content is for reference

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