IR21362PBF Allicdata Electronics
Allicdata Part #:

IR21362PBF-ND

Manufacturer Part#:

IR21362PBF

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Infineon Technologies
Short Description: IC DRIVER BRIDGE 3-PHASE 28-DIP
More Detail: Half-Bridge Gate Driver IC Inverting, Non-Invertin...
DataSheet: IR21362PBF datasheetIR21362PBF Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Current - Peak Output (Source, Sink): 200mA, 350mA
Base Part Number: IR21362PBF
Supplier Device Package: 28-PDIP
Package / Case: 28-DIP (0.600", 15.24mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Rise / Fall Time (Typ): 125ns, 50ns
High Side Voltage - Max (Bootstrap): 600V
Input Type: Inverting, Non-Inverting
Series: --
Logic Voltage - VIL, VIH: 0.8V, 3V
Voltage - Supply: 11.5 V ~ 20 V
Gate Type: IGBT, N-Channel MOSFET
Number of Drivers: 6
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Part Status: Obsolete
Packaging: Tube 
Description

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The IR21362PBF is a high side gate driver with a high speed 200 V power MOSFET and IGBTs. It is designed to drive large load currents and can be used with multiple load configurations. It is also designed to provide a low drive strength and high-side current limiting.

The IR21362PBF is ideal for applications where both low and high side control is needed in order to drive large loads. It can be used to drive high peak currents and reduce EMI issues. It can be used in AC-DC power conversion applications, motor drives and power supplies.

The IR21362PBF is a single-chip, high speed power MOSFET and IGBT driver with a dual-mode logic control input. It has a maximum input current limit of 8A and a high-speed logic output slew rate of 8V/ns. The device offers a maximum operating temperature range of -40°C to +85°C and is available in either a DIP or SOIC package.

The IR21362PBF offers a wide range of protection features including load current and thermal limit, overvoltage, undervoltage and overcurrent protection. It also provides protection against over-temperature, reverse-current and open-circuit conditions. The device also offers a low power shutdown mode, which can be enabled through a logic input.

The IR21362PBF is designed to provide an isolated high-side power MOSFET and IGBT drive in both static and dynamic/pulsed modes. The static mode offers a steady high level of drive current, and the dynamic mode offers a fast, short-duration pulse of current. The device also offers a fast turn-off of up to 100ns.

The IR21362PBF offers a high degree of flexibility in terms of powering and controlling the device, as it is capable of operating with either a single VCC supply at up to 24V or dual VCC supplies at up to 16V/20V. In addition, the device can be powered from a variety of sources, including TTL logic levels, isolated DC-DC converters and DC-AC inverters.

The IR21362PBF utilizes a high speed MOSFET and IGBT driver IC to provide the required high-speed pulse current drive. The device works by using two input signals: a logic level input (EN) and a PWM signal (PWM). The EN signal is used to enable the device and the PWM signal determines the desired current level. The current level is either static low, static high or dynamic, depending on the PWM signal. The EN signal is used to enable the device and the PWM signal is used to provide the pulse current.

The IR21362PBF provides a flexible and cost-effective solution for applications where high-side control is required. It is an ideal solution for AC-DC power conversion, motor drive, and power supplies. By integrating a high-speed power MOSFET and IGBT driver, the IR21362PBF can be used to drive large loads and reduce EMI issues.

The specific data is subject to PDF, and the above content is for reference

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