IR2112PBF Allicdata Electronics
Allicdata Part #:

IR2112PBF-ND

Manufacturer Part#:

IR2112PBF

Price: $ 2.40
Product Category:

Integrated Circuits (ICs)

Manufacturer: Infineon Technologies
Short Description: IC MOSFET DVR HI/LO SIDE 14-DIP
More Detail: Half-Bridge Gate Driver IC Non-Inverting 14-DIP
DataSheet: IR2112PBF datasheetIR2112PBF Datasheet/PDF
Quantity: 1582
1 +: $ 2.40000
10 +: $ 2.32800
100 +: $ 2.28000
1000 +: $ 2.23200
10000 +: $ 2.16000
Stock 1582Can Ship Immediately
$ 2.4
Specifications
Current - Peak Output (Source, Sink): 250mA, 500mA
Base Part Number: IR2112PBF
Supplier Device Package: 14-DIP
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Rise / Fall Time (Typ): 80ns, 40ns
High Side Voltage - Max (Bootstrap): 600V
Input Type: Non-Inverting
Series: --
Logic Voltage - VIL, VIH: 6V, 9.5V
Voltage - Supply: 10 V ~ 20 V
Gate Type: IGBT, N-Channel MOSFET
Number of Drivers: 2
Channel Type: Independent
Driven Configuration: Half-Bridge
Part Status: Active
Packaging: Tube 
Description

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The IR2112PBF is a monolithic high and low side driver. It can drive a wide range of loads, including solenoid and valve actuators, DC and AC motors, incandescent and fluorescent lamps, relays, small transformers, and other inductive loads. The device provides robust output current and can safely drive large loads with small geometrical area. It can be used in a variety of applications, including automotive, industrial, robotics, telecommunication, medical and security systems.

Application Field

The IR2112PBF is suitable for a wide range of applications. It can be used to drive high or low side loads such as solenoid and valve actuators, DC and AC motors, incandescent and fluorescent lamps, relays, small transformers, and other inductive loads. It can also be used to provide high-side gate drives for N-channel MOSFETs and IGBTs. This makes it ideal for switching power circuits such as DC-DC converters and Motor control circuits. It can also be used for power supplies, inverters, lighting, industrial control systems, and any other system that requires efficient and reliable power switching.

Features

  • High output current drive capacity: up to 1.8 A (continuously)
  • Operating voltage range: 6V ~ 20V
  • Wide temperature range: -40°C to 150°C
  • Low input current: typically 100µA
  • Lead-free, RoHS-compliant package

Working Principle

The main function of the IR2112PBF is to provide high and low side gate drive signals for two power MOSFET’s or IGBT’s connected in either a high side/low side configuration or a totem pole configuration. It is designed to drive the gates of high power MOSFETs or IGBTs with low power inputs. The output drivers of the device are high speed switching devices with short turn-on and turn-off times. The outputs can switch from low to high or from high to low in 3 to 4µs. The high load driving capacity and high switching speeds of the device make it suitable for power switching applications.

The device is protected against over-current, over-temperature, and under-voltage conditions. Under over-current and over-temperature conditions, the device shuts down and latches off the output. The device then resumes normal operation after the temperature or the load current is reduced below their maximum limits. Under under-voltage conditions, the device will not turn on until the supply voltage rises above the UVLO (under-voltage lockout) threshold.

The device has two independent output channels. Each channel has an independent input signal (threshold current, high side gate drive, and low side gate drive) that can be driven from a PWM signal or a logic signal. The device also has separate frequencies for the high side and low side outputs, which can be adjusted by external resistors.

The device is available in an 8-pin SOIC package. It is lead-free and RoHS compliant, making it suitable for high-volume and environmentally friendly applications.

Conclusion

The IR2112PBF is a monolithic high and low side driver. It is designed to drive the gates of high power MOSFETs and IGBTs with low power inputs, making it suitable for power switching applications. It provides robust output current, has a wide temperature range, and can be used in a variety of applications. The device is protected against over-current, over-temperature, and under-voltage conditions. It is available in an 8-pin SOIC package and is lead-free and RoHS-compliant, making it suitable for high-volume and environmentally friendly applications.

The specific data is subject to PDF, and the above content is for reference

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