IR2113-1PBF Allicdata Electronics
Allicdata Part #:

IR2113-1PBF-ND

Manufacturer Part#:

IR2113-1PBF

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Infineon Technologies
Short Description: IC MOSFET DRVR HI/LO SIDE 14DIP
More Detail: Half-Bridge Gate Driver IC Non-Inverting 14-PDIP
DataSheet: IR2113-1PBF datasheetIR2113-1PBF Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Current - Peak Output (Source, Sink): 2A, 2A
Base Part Number: IR2113-1PBF
Supplier Device Package: 14-PDIP
Package / Case: 14-DIP (0.300", 7.62mm), 13 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Rise / Fall Time (Typ): 25ns, 17ns
High Side Voltage - Max (Bootstrap): 600V
Input Type: Non-Inverting
Series: --
Logic Voltage - VIL, VIH: 6V, 9.5V
Voltage - Supply: 3.3 V ~ 20 V
Gate Type: IGBT, N-Channel MOSFET
Number of Drivers: 2
Channel Type: Independent
Driven Configuration: Half-Bridge
Part Status: Obsolete
Packaging: Tube 
Description

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PMIC - Gate Drivers are an integrated circuit with the flexibility to control two output channels (high and low side). The IR2113-1PBF is an example of an IC gate driver.

The IR2113-1PBF has many features and advantages that make it an optimal choice for controlling switching power conversion and driving power MOSFETs, IGBTs or both concurrently. With its standalone capabilities and prototyping ease of use, the IR2113-1PBF is a popular choice for designs that require low-cost and/or low complexity solutions. It is often used in applications such as MCUs, DC/DC converters, motor control and automotive.

The IR2113-1PBF can be used for several gate driver application fields. It is suitable for driving IGBTs and power MOSFETs up to 1A and has the advantages of fault protection and various output operating modes. This IC\'s proprietary active Miller clamp circuit reduces stress on the IGBT collector-emitter junction. The IR2113-1PBF can be used in flyback, forward, buck, boost, and half-bridge topologies. Also due to its high throttle level (<2.7V) and bootstrap logic, the IC is designed for low impedance gate drive technology.

The working principle of the IR2113-1PBF is based on its two output channels (high and low side). The high side driver channel is connected to the gate of the power MOSFET and the low side driver channel connected to the gate of the IGBT. The two input pins (VCCA and VCCB) have an internal voltage source, which is used to control the gate driver. The output pins (I1 and I2) output currents to control both the high and low side MOSFET/IGBT gates simultaneously.

The IR2113-1PBF contains several fault sensing and output protection features. Current trip (CTRP) and Current Sense (CTSP) circuits are included to detect excessive currents in the output channels. A short circuit protection (SCP) circuit can also be used to detect short circuit events. If a fault is detected, the IC will immediately switch off the output channels. A separate stuck-off protection (SOP) circuit is used to monitor voltage anomalies on the output channels.

The IR2113-1PBF remains an optimal choice for applications requiring low-cost and low complexity solutions. Its various features such as fault protection, active Miller clamp circuit, high throttle level and its ability to control both IGBTs and power MOSFETs make the IC a preferred choice for cutting-edge applications. The IR2113-1PBF has proven to be an invaluable asset for contemporary designs which require efficient control of power switching and driving of power MOSFETs and IGBTs.

The specific data is subject to PDF, and the above content is for reference

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