IR21141SSTRPBF

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Driven Configuration:	Half-Bridge
Channel Type:	Independent
Number of Drivers:	2
Gate Type:	IGBT
Voltage - Supply:	11.5 V ~ 20 V
Logic Voltage - VIL, VIH:	0.8V, 2V
Current - Peak Output (Source, Sink):	2A, 3A
Input Type:	Non-Inverting
High Side Voltage - Max (Bootstrap):	600V
Rise / Fall Time (Typ):	24ns, 7ns
Operating Temperature:	-40°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	24-SSOP (0.209", 5.30mm Width)
Supplier Device Package:	24-SSOP
Base Part Number:	IR21141SSPBF

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IR21141SSTRPBF is a high-performance, dual single-channel high- and low-side gate driver with a power switch featuring an integrated Schottky diode. It is a member of the IR21141 family of dual single-channel high- and low-side gate drivers with a power switch. It offers superior protection and diagnostic capabilities, high-temperature operation, and output current protection in a compact package.The IR21141SSTRPBF gate driver is part of a system-in-package application field and can be used in many power applications such as automotive, solar, and high-power designs. It is compatible with high- and low-side gate selector switches, and contains built-in features for protection and fault detection, allowing for a more efficient power management system.An application field for the IR21141SSTRPBF is automotive power switching. The integrated power switch, Schottky diode, and gate driver are designed to provide robust and reliable performance for automotive switching applications. The driver is designed to operate from the positive side of the battery and drive an external N-channel MOSFETs. The IAS (Independent Action Switch) and the overload protection for both high- and low-side switching are designed to protect the system against events such as excessive load current, short circuit, and overvoltage, ensuring reliable protection and improved driver efficiency.The working principle of the IR21141SSTRPBF is based on the standard dual asymmetric MOSFET power switches. The device has two independent power switches, one channel operating in the high-side and one in the low-side. Each power switch is composed of two N-channel MOSFETs in a half-bridge configuration single-ended topology. The high-side switch is connected between VIN and the high-side gate driver output, and the low-side switch is connected between VOUT and the low-side gate driver output. Depending on the state of the gate driver, one of the MOSFETs of the bridge is turned on and the other is turned off. This differential control allows the logic level voltage to be applied to the low side switch gate terminal while the high side switch gate terminal is driven to the level of the VIN supply.The IR21141SSTRPBF gate driver is integrated with many features to enable a flexible and reliable system. The integrated Schottky diode provides low voltage drop, thereby minimizing the overall power losses. An enable pin is also provided to enable or disable the gate driver. When the enable pin is low, the high-side and low-side gates are disabled, allowing for a controlled connection between the load and the supply.In addition to the standard features, the IR21141SSTRPBF also includes integrated fault detection and protection features. When an overcurrent event occurs, the devices feature Over load Protection (OLP) which shuts down the power switch. Additionally, if an overvoltage condition occurs, the devices feature Over voltage Protection (OVP) which shuts down the power switch. These two features allow for fast and reliable protection of the system against faults.The IR21141SSTRPBF gate driver offers a high-performance and reliable design for automotive and high-power applications. The integrated protection and diagnostic capabilities, high-temperature operation, and output current protection allows for efficient power management and system protection. The device is an ideal choice for applications such as automotive, solar, and high-power designs.

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