Current - Peak Output (Source, Sink):	1.9A, 2.3A
Base Part Number:	IR21834SPBF
Supplier Device Package:	14-SOIC
Package / Case:	14-SOIC (0.154", 3.90mm Width)
Mounting Type:	Surface Mount
Operating Temperature:	-40°C ~ 150°C (TJ)
Rise / Fall Time (Typ):	40ns, 20ns
High Side Voltage - Max (Bootstrap):	600V
Input Type:	Inverting, Non-Inverting
Series:	--
Logic Voltage - VIL, VIH:	0.8V, 2.7V
Voltage - Supply:	10 V ~ 20 V
Gate Type:	IGBT, N-Channel MOSFET
Number of Drivers:	2
Channel Type:	Independent
Driven Configuration:	Half-Bridge
Part Status:	Active
Packaging:	Tube

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IR21834SPBF application field and working principle

Introduction

The IR21834SPBF is a monolithic N-channel MOSFET which is used for a wide range of applications, from motor drives and power management to motor controllers and system level power supplies. It is designed to deliver high levels of performance at an extremely low cost. This device features an advanced driver/controller architecture intended for high-side as well as low-side applications. It is ideal for applications requiring low EMI and low RDS on power paths.

Application field

The IR21834SPBF is used in a wide range of motor drive and power management applications. In motor drives it can be used to control the current output of the motor, while in power management applications it can be used to regulate the supply voltage. It is also used in system level power supplies as well as motor controllers.In motor drives and system level power supplies, the gate voltage is typically provided by an I/O port. The I/O port provides a voltage from 3.2 to 5.5 volts, which is used to drive the device.In motor controllers, the gate voltage is provided by a digital controller or a gate driver IC. The gate driver IC is designed to provide the optimal voltage for driving the device, and also prevents the gate voltage from exceeding the maximum drain-source voltage.

Working principle

The IR21834SPBF works on the principle of voltage-induced-conductivity. This device is built on a special semiconductor process, which has an inherent oxide layer separating the source and drain. The drive voltage applied between the source and the drain causes electrons to flow through this layer, resulting in current flow through the device.When the gate voltage is increased, the electrons flow more easily, increasing the current flow. When the gate voltage is decreased, the electrons are repelled, resulting in lower current flow. This device can handle high frequency switching and offers superior performance in low noise, high speed switching applications.

Benefits

The IR21834SPBF offers a number of benefits over other MOSFETs. These include:- High current handling capabilities- Low on-resistance for minimal power loss- Low quiescent current for extended battery life- Built-in protection from over voltage, over current and over temperature- Low EMI- High switching speeds- High reliability, due to its low number of components

Conclusion

The IR21834SPBF is a monolithic N-channel MOSFET, which is used for a wide range of applications. It is designed to deliver high levels of performance at an extremely low cost. It is ideal for applications requiring low EMI and low RDS on power paths. The gate voltage is typically provided by an I/O port, a digital controller or a gate driver IC. This device works on the principle of voltage-induced conductivity and offers superior performance in low noise, high speed switching applications.

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