IRGI4060DPBF Allicdata Electronics

IRGI4060DPBF Discrete Semiconductor Products

Allicdata Part #:

IRGI4060DPBF-ND

Manufacturer Part#:

IRGI4060DPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT 600V 14A 37W TO220ABFP
More Detail: IGBT Trench 600V 14A 37W Through Hole TO-220AB Ful...
DataSheet: IRGI4060DPBF datasheetIRGI4060DPBF Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Stock 1000Can Ship Immediately
Specifications
Power - Max: 37W
Supplier Device Package: TO-220AB Full-Pak
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Reverse Recovery Time (trr): 73ns
Test Condition: 400V, 7.5A, 47 Ohm, 15V
Td (on/off) @ 25°C: 29ns/101ns
Gate Charge: 19nC
Input Type: Standard
Switching Energy: 47µJ (on), 141µJ (off)
Series: --
Vce(on) (Max) @ Vge, Ic: 1.72V @ 15V, 7.5A
Current - Collector Pulsed (Icm): 23A
Current - Collector (Ic) (Max): 14A
Voltage - Collector Emitter Breakdown (Max): 600V
IGBT Type: Trench
Moisture Sensitivity Level (MSL): --
Part Status: Obsolete
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

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IRGI4060DPBF is a single insulated gate bipolar transistor (IGBT) made of silicon material. It is suitable for applications where high switching speed and low noise are required.

Application Field:

The IRGI4060DPBF is primarily used in consumer and automotive applications, such as ATVs, flywheel motors and regenerative braking. It is also suitable for applications that require little or no voltage overshoots, such as Uninterruptible Power Supplies (UPS), solar inverters and AC/DC converters. In some kinds of welding equipment, it provides high-efficiency switching.

Working Principle:

The working principle of the IRGI4060DPBF is based on the transfer of electrical current from the n-type (conductive) region to the p-type (insulated) region. When a positive voltage is applied to the gate, the junction between the n-type and p-type region turns on, and current begins to flow. When the voltage is removed, the junction turns off, and the flow of current stops.

The IRGI4060DPBF has a maximum collector-emitter voltage of 600V and a maximum current of 40A. It is available in a through-hole package and can be used in applications operating up to 175degC. The on-resistance of the device varies depending on the gate voltage, but it is typically between 0.45 ohms (at 4.5V) and 0.25 ohms (at 10V).

The IRGI4060DPBF is a simple and cost-effective solution for low-voltage, high-current applications. It is designed to operate at frequencies up to 5kHz, with a maximum rise and fall time of 1.5µs. Due to its fast switching speed, it is suitable for applications where the response time needs to be kept to a minimum.

The IRGI4060DPBF has been designed with safety in mind. Its low forward voltage, low gate current and low inverse voltage characteristics make it an excellent choice for applications where overvoltage protection is essential. Additionally, its low thermal resistance ensures that the transistor is not damaged due to excessive heat.

The IRGI4060DPBF is an integral part of many consumer and automotive applications. Its wide range of features makes it a dependable and reliable transistor, suitable for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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