IRGIB10B60KD1P

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IRGIB10B60KD1P is a 7-pin insulated-gate bipolar transistor (IGBT) module, belonging to the Mitsubishi single IGBT module series. It should be widely used in various medium- and large-sized inverter applications. This single IGBT has low loss, high switching speed, high surge current capability, as well as short-circuit protection and an integrated free-wheeling diode, making it an ideal choice for power converters and motor drives.

Its application field includes AC motor control, induction heating, UPS (Uninterruptible Power Supply), traction systems, air-conditioning and other industrial applications.

IRGIB10B60KD1P Working Principle

IGBTs are voltage-controlled transistors that combine the attractive features of both bipolar and field effect transistors. It consists of an N-channel field effect transistor (FET), and a PNP bipolar transistor in conjunction, allowing it to act as a voltage-controlled switch. The P-base terminal of the bipolar is connected to the emitter of the FET, forming a common collector between them, giving the transistor its combined FET and bipolar (FETBi) characteristics.

The IRGIB10B60KD1P is a single IGBT module, and works on a three-level principle. When the module is in the OFF state, no current is passing through the transistor, and the voltage on the collector is low. When the base-emitter voltage is applied, the current starts to flow through the collector-emitter voltage of the module. The voltage and current then reach their peak value, entering the full-on state.

In the three-level principle, the voltage and current in the collector-emitter voltage of the module will continuously decrease when the applied voltage is decreased. When the applied voltage drops below the so-called valley voltage, the module will go into the fast recovery mode and the current in the collector-emitter voltage of the module will be returned to a low value. This low value will then be maintained for as long as the applied voltage is kept low. When the applied voltage starts to increase again, the voltage and current on the collector-emitter voltage of the module will increase, re-entering the full-on state.

The IRGIB10B60KD1P module has an integrated anti-parallel diode and can help to reduce the drain current for an easier control. It also has a maximum junction temperature rating of 150°C and an isolation voltage rating of 600VAC, which is suitable for medium- and large-sized inverters and other applications.

Therefore, the IRGIB10B60KD1P is a single IGBT module suitable for various medium- and large-sized inverter applications such as AC motor control, induction heating, UPS (Uninterruptible Power Supply), traction systems, air-conditioning and other industrial applications. It has a low loss, high switching speed and high surge current capability, as well as short-circuit protection and integrated free-wheeling diode. This module can help reduce the drain current for an easier control and is suitable for various medium- and large-sized inverter applications.

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