IRGI4090PBF Discrete Semiconductor Products |
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Allicdata Part #: | IRGI4090PBF-ND |
Manufacturer Part#: |
IRGI4090PBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT 300V 21A 34W TO220ABFP |
More Detail: | IGBT Trench 300V 21A 34W Through Hole TO-220AB Ful... |
DataSheet: | IRGI4090PBF Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
1 +: | 0.00000 |
Power - Max: | 34W |
Supplier Device Package: | TO-220AB Full-Pak |
Package / Case: | TO-220-3 Full Pack |
Mounting Type: | Through Hole |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Test Condition: | 240V, 11A, 10 Ohm |
Td (on/off) @ 25°C: | 20ns/99ns |
Gate Charge: | 34nC |
Input Type: | Standard |
Switching Energy: | -- |
Series: | -- |
Vce(on) (Max) @ Vge, Ic: | 1.94V @ 15V, 30A |
Current - Collector (Ic) (Max): | 21A |
Voltage - Collector Emitter Breakdown (Max): | 300V |
IGBT Type: | Trench |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Obsolete |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tube |
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IRGI4090PBF is an insulated gate bipolar transistor (IGBT) that is specifically designed for high frequency (HF) switching applications. It is made up of an emitter, base and collector and contains several different electrical components, including three metal-oxide-semiconductor field-effect transistors (MOSFETs). The IRGI4090PBF is a single IGBT and has a rated voltage of 400V and a blocking voltage up to 600V. It also has a peak current capability of 15A.
The IRGI4090PBF is designed for use in HF switching power supplies, motor control, induction heating and converters, rectifiers and inverters. The device can be used in high performance motor control applications because of its fast switching speed and low gate charge. It also has low on-state and switching losses, allowing it to be used in low power applications. Additionally, the IRGI4090PBF has a high gate insulation voltage of 1000V, which provides improved protection from the ESD protection.
The working principle of the IRGI4090PBF is quite simple. It is a bipolar transistor with an insulated gate. When a positive voltage is applied to the gate, the gate insulator will become electrically charged. This will cause the transistor to turn on, allowing current to flow through the transistor. When the voltage is removed from the gate, the transistor will turn off, preventing current from flowing through the transistor.
The IRGI4090PBF has several advantages over other types of transistors. It has a low gate charge and fast switching speeds, making it convenient for high frequency applications. It also has a high breakdown voltage and low on-state and switching losses, making it suitable for a wide range of applications. Additionally, the device has a high gate insulation voltage, providing improved protection from ESD.
In conclusion, the IRGI4090PBF is an ideal choice for high frequency switching applications. The device features a low gate charge, fast switching speeds and low on-state and switching losses, making it suitable for a wide range of applications. Additionally, it has a high insulation voltage and is protected from ESD. This makes the IRGI4090PBF an excellent choice for use in a range of different applications.
The specific data is subject to PDF, and the above content is for reference
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