Allicdata Part #: | IRGIB4640DPBF-ND |
Manufacturer Part#: |
IRGIB4640DPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT 600V 65A 250W TO220 |
More Detail: | IGBT NPT 600V 65A 250W Through Hole TO-220AB |
DataSheet: | IRGIB4640DPBF Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Switching Energy: | 115µJ (on), 600µJ (off) |
Supplier Device Package: | TO-220AB |
Package / Case: | TO-220-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Reverse Recovery Time (trr): | 89ns |
Test Condition: | 400V, 24A, 10 Ohm, 15V |
Td (on/off) @ 25°C: | 41ns/104ns |
Gate Charge: | 75nC |
Input Type: | Standard |
Series: | -- |
Power - Max: | 250W |
Vce(on) (Max) @ Vge, Ic: | 1.9V @ 15V, 24A |
Current - Collector Pulsed (Icm): | 72A |
Current - Collector (Ic) (Max): | 65A |
Voltage - Collector Emitter Breakdown (Max): | 600V |
IGBT Type: | NPT |
Part Status: | Obsolete |
Packaging: | Tube |
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Transistors – IGBTs – Single
IRGIB4640DPBF Application Field and Working Principle
IRGIB4640DPBF is a type of Insulated Gate Bipolar Transistor (IGBT), a power semiconductor device commonly used in low voltage applications. The device is designed to have a blocking voltage of 600V and a current rating of 90A at a temperature range of -55 to +150 °C. It is used in many applications like motor controls, switching power supplies and UPS systems, traction systems and renewable energy applications.
IGBTs are three-terminal devices with two main terminals: the emitter (E) and collector (C) and the gate (G) terminal. The structure of an IGBT combines the best of both junction FETs (JFETs) and bipolar junction transistors (BJTs). The IGBT acts as a voltage-controlled bipolar device and is characterized by its low conduction losses, low gate drive power and high input impedance.
In terms of functionality, IGBTs are highly efficient switches which can be easily operated to regulate current flow between the collector (C) and emitter (E) terminals. The gate-emitter voltage (VGE) drives the current flow through the IGBT by controlling the potential barrier between the collector and emitter terminals. The device can be turned on to allow current flow by increasing the gate-emitter voltage, and can be switched off by reducing it.
The IRGIB4640DPBF is a Single type IGBT, which means the device performs its function by using a single charge carrier – the electron. It is typically used in high-speed switching applications, such as switching power supplies and UPS systems, motor controls and traction systems, as well as renewable energy applications. The device also provides higher power density and lower conduction losses over conventional power switch solutions, making it an ideal choice for these applications.
In terms of its operation, the IRGIB4640DPBF has the following features: voltage blocking of 600V and current rating of 90A; frequency of 1MHz; operating temperature from -55 to +150 °C; turn-on time of 6.5µs; turn-off time of 1.2µs; pull-in voltage of 3V; and maximum efficiency of 96%.
The IRGIB4640DPBF is typically used for switching power supplies and UPS systems, motor controls and traction systems, as well as renewable energy applications. It is also used in applications such as light dimming, DC-DC converters and power factor correction (PFC) systems.
By way of conclusion, the IRGIB4640DPBF is a type of Single IGBT, which offers excellent performance characteristics for a variety of applications. It features a low conduction loss, high power density and low gate drive power, making it an ideal choice for high-speed switching applications. Finally, it has a voltage blocking of 600V and a current rating of 90A, making it suitable for a range of applications, including switching power supplies, UPS systems, motor controls and renewable energy applications.
The specific data is subject to PDF, and the above content is for reference
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