IRGIB4630DPBF

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

IRGIB4630DPBF is a type of Insulated Gate Bipolar Transistor (IGBT). IRGIB4630DPBF is a fast-switching, insulated gate bipolar transistor module with a rated collector-emitter voltage (VCES) of 600V, a maximum power dissipation of 620W, and a typical reverse transfer capacitance of 360pF. As such, the IRGIB4630DPBF is suitable for motor control and other power switching applications operating at frequencies of up to 100kHz.

The IRGIB4630DPBF is a type of single IGBT. A single IGBT is an IGBT with a single voltage level. As opposed to a cascode IGBT, which is an IGBT with multiple voltage levels, a single IGBT has a single source-emitter voltage level. A single IGBT also has a single collector-substrate voltage level, unlike cascode IGBTs which have multiple collector-substrate voltage levels.

Single IGBTs are typically used in applications requiring high switching speeds and high power ratings. The main advantage of single IGBTs over cascode IGBTs is that they offer a reduced gate charge and faster switching times, due to their single source-emitter voltage level. As such, they are ideal for high-switching-frequency applications such as motor control or other power switching applications operating at frequencies up to 100kHz.

The working principle of the IRGIB4630DPBF IGBT is based on that of a traditional bipolar transistor. In its most basic form, an IGBT consists of three layers; an N-type collector, a P-type base, and an N-type emitter. When a voltage is applied to the collector, electrons flow through the collector base junction, causing the base to become negatively charged and the collector to become positively charged. This creates a potential barrier between the collector and the emitter that is greater than the Fermi level of the collector, which prevents current from flowing from the collector to the emitter.

When a gate voltage is applied, the potential barrier between the collector and the emitter is reduced, allowing current to flow from the collector to the emitter. This is the “on” state of the IGBT, and is referred to as forward conduction. When the gate voltage is removed, the potential barrier increases and the IGBT turns off, halting the current flow from the collector to the emitter.

The IRGIB4630DPBF is a fast-switching, efficient IGBT. It is suitable for applications requiring high-speed switching such as motor control, as well as other power switching applications operating at frequencies up to 100kHz. Its main benefit over cascode IGBTs is that it offers a reduced gate charge and faster switching times due to its single source-emitter voltage level.

The specific data is subject to PDF, and the above content is for reference