IRGIB7B60KDPBF Allicdata Electronics

IRGIB7B60KDPBF Discrete Semiconductor Products

Allicdata Part #:

IRGIB7B60KDPBF-ND

Manufacturer Part#:

IRGIB7B60KDPBF

Price: $ 0.98
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT 600V 12A 39W TO220FP
More Detail: IGBT NPT 600V 12A 39W Through Hole TO-220AB Full-P...
DataSheet: IRGIB7B60KDPBF datasheetIRGIB7B60KDPBF Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
1 +: $ 0.98000
10 +: $ 0.95060
100 +: $ 0.93100
1000 +: $ 0.91140
10000 +: $ 0.88200
Stock 1000Can Ship Immediately
$ 0.98
Specifications
Power - Max: 39W
Supplier Device Package: TO-220AB Full-Pak
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Reverse Recovery Time (trr): 95ns
Test Condition: 400V, 8A, 50 Ohm, 15V
Td (on/off) @ 25°C: 23ns/140ns
Gate Charge: 29nC
Input Type: Standard
Switching Energy: 160µJ (on), 160µJ (off)
Series: --
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 8A
Current - Collector Pulsed (Icm): 24A
Current - Collector (Ic) (Max): 12A
Voltage - Collector Emitter Breakdown (Max): 600V
IGBT Type: NPT
Moisture Sensitivity Level (MSL): --
Part Status: Last Time Buy
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The IRGIB7B60KDPBF is a type of transistor belonging to the class of Insulated Gate Bipolar Transistors (IGBTs). In this type of transistor, the bipolar junction transistors (BJT) are combined with an insulated gate field effect differential (IGFET). This combination provides the transistor excellent characteristics that make it the preferred choice for applications requiring high voltage and current. It is also known as a single IGBT.

What makes the single IGBT unique is the gate insulation layer that isolates the two sides of the device. This layer is constructed from a dielectric material and ensures that the transistor can switch on and off without having to worry about external forces affecting the performance of the device. In order for this insulation layer to be effective, it needs to be kept in good condition. This means that the transistor is not as reliable as some of its counterparts, such as the bipolar junction transistor (BJT). However, this limitation is a small one compared to the benefits of the single IGBT provides.

The single IGBT provides higher current and voltage conduction levels than the BJT. Since it can handle higher voltages, the single IGBT is often used in high power applications. It can be used to switch large currents at high voltage levels, making it ideal for applications in power supplies, motor controls, and power circuits. In addition, its high switching speed also makes it a popular choice for applications requiring fast data transmission.

The single IGBT can also be used in a variety of applications due to its ability to switch quickly and its capability to conduct large amounts of power without generating excessive heat. It can be used for lighting, switching, pulse width modulation, radio frequency generation, etc. It can also be used to control medium to high current loads. Additionally, by using the single IGBT, it is possible to reduce the noise generated by the current being switched.

When looking at the working principle of the single IGBT, we can easily understand why it is so versatile and reliable. Essentially, when the two sides of the transistor are kept isolated by the gate insulation layer, no current will be able to flow between them unless there is a path between the two sides that is sufficient enough to allow some current to flow. Since the gate insulation layer is designed to effectively insulate the two sides, the only way for current to flow is by allowing a voltage drop across the gate insulation layer.

When the voltage drop is sufficient enough, a small current will flow through the gate insulation layer, allowing the transistor to switch. This is a very simple method of switching and due to the construction of the single IGBT, it is both reliable and versatile. It can handle large current and voltage levels and still maintain its switching speeds. Additionally, it is also capable of switching very quickly, which is a benefit for applications that require fast data transmission.

In conclusion, the IRGIB7B60KDPBF is a type of single IGBT that provides a high-performance solution for applications requiring high current and voltage levels. Its ability to switch quickly and its capabilities to conduct large amounts of power without producing excessive heat make it an ideal choice for a variety of applications. Moreover, its simple working principle makes it a reliable and versatile transistor for medium to high current loads.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "IRGI" Included word is 21
Part Number Manufacturer Price Quantity Description
IRGIB7B60KDPBF Infineon Tec... -- 1000 IGBT 600V 12A 39W TO220FP...
IRGI4064DPBF Infineon Tec... 0.0 $ 1000 IGBT 600V 15A 38W TO220IG...
IRGIB4610DPBF Infineon Tec... 0.0 $ 1000 IGBT 600V FULLPAK220 COPA...
IRGI4085-111PBF Infineon Tec... 0.0 $ 1000 IGBT 330V 28A 38W TO220AB...
IRGI4045DPBF Infineon Tec... -- 1000 IGBT 600V 11A 33W TO220AB...
IRGIB4615DPBF Infineon Tec... 0.0 $ 1000 IGBT 600V FULLPAK220 COPA...
IRGI4060DPBF Infineon Tec... -- 1000 IGBT 600V 14A 37W TO220AB...
IRGI4062DPBF Infineon Tec... 0.0 $ 1000 IGBT 600V 22A 48W TO220AB...
IRGIB4607DPBF Infineon Tec... 0.0 $ 1000 IGBT 600V FULLPAK220 COPA...
IRGIB15B60KD1P Infineon Tec... -- 1000 IGBT 600V 19A 52W TO220FP...
IRGIB6B60KD116P Infineon Tec... 0.0 $ 1000 IGBT 600V 11A 38W TO220FP...
IRGI4059DPBF Infineon Tec... 0.0 $ 1000 IGBT TO220ABIGBT Thro...
IRGIB6B60KDPBF Infineon Tec... -- 33 IGBT 600V 11A 38W TO220FP...
IRGIB4640DPBF Infineon Tec... 0.0 $ 1000 IGBT 600V 65A 250W TO220I...
IRGI4086PBF Infineon Tec... -- 1000 IGBT 300V 25A 43W TO220AB...
IRGIB4630DPBF Infineon Tec... 0.0 $ 1000 IGBT 600V 47A 206W TO220I...
IRGIB4620DPBF Infineon Tec... -- 1000 IGBT 600V 32A 140W TO220I...
IRGIB10B60KD1P Infineon Tec... -- 2 IGBT 600V 16A 44W TO220FP...
IRGI4056DPBF Infineon Tec... -- 1000 IGBT 600V 18A 34W TO220FP...
IRGI4061DPBF Infineon Tec... -- 1000 IGBT 600V 20A 43W TO220FP...
IRGI4090PBF Infineon Tec... 0.0 $ 1000 IGBT 300V 21A 34W TO220AB...
Latest Products
IKW03N120H2FKSA1

IGBT 1200V 9.6A 62.5W TO247-3IGBT 1200V...

IKW03N120H2FKSA1 Allicdata Electronics
AUXKNG4PH50S-215

IGBT 1200V TO247-3IGBT

AUXKNG4PH50S-215 Allicdata Electronics
AUIRG4PH50S-205

IGBT 1200V TO247-3IGBT 1200V 57A 200W T...

AUIRG4PH50S-205 Allicdata Electronics
AUXMIGP4063D

IGBT 600V TO-247 COPAKIGBT

AUXMIGP4063D Allicdata Electronics
FGD3N60LSDTM-T

INTEGRATED CIRCUITIGBT 600V 6A 40W Surf...

FGD3N60LSDTM-T Allicdata Electronics
IXGM40N60AL

POWER MOSFET TO-3IGBT

IXGM40N60AL Allicdata Electronics