Series:	--
Packaging:	Tube
Part Status:	Obsolete
IGBT Type:	--
Voltage - Collector Emitter Breakdown (Max):	600V
Current - Collector (Ic) (Max):	15A
Vce(on) (Max) @ Vge, Ic:	--
Switching Energy:	145µJ (on), 70µJ (off)
Input Type:	Standard
Td (on/off) @ 25°C:	--
Test Condition:	--
Operating Temperature:	--
Mounting Type:	Through Hole
Package / Case:	TO-220-3 Full Pack
Supplier Device Package:	TO-220FP

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Introduction

IRGIB4615DPBF is a Single IGBT (Insulated Gate Bipolar Transistor) and is a fast power switch designed for high power and reliable operation. It is designed to provide an efficient solution for a range of different applications, from motor control and drives, to AC/DC converters, welding and DC-DC converters. The single IGBT is ideal for applications where high current and/or high voltage is required.

Overview of IRGIB4615DPBF

IRGIB4615DPBF is a high current and high voltage IGBT module. It is capable of switching up to 200A maximum, at voltages of up to 600V DC. It features low on-state voltage drop, low gate charge and fast switching. The IGBT module also contains a fast recovery diode to provide protection against transient overvoltages.The device has a maximum case temperature of 150°C, and a maximum junction temperature of 175°C. It has a high current density of 990 A/cm2 for the collector, and a high power density of 350 W/cm2 for the collector.

Application Fields of IRGIB4615DPBF

IRGIB4615DPBF is suitable for many applications such as motor control, welding and AC/DC power converters. It is suitable for high power applications, such as motor drives, which require high switching speeds and high switching power. It is also suitable for high power AC/DC power converters. It is suitable for motor control applications due to its high switching capability and fast switching speed. It is suitable for welding applications due to its high current and voltage capability. It is suitable for AC/DC power converters due to its high power density, high current density and low on-state voltage drop.

Working Principle of IRGIB4615DPBF

The IGBT module works by using the principle of a MOSFET, which is a type of field effect transistor (FET). The IGBT module is switching devices consisting of a control terminal, a gate terminal and a collector terminal. The control terminal is connected to the gate terminal, and both terminals are connected to the collector terminal. When the voltage applied to the control terminal changes, it changes the field between the gate and collector terminals, and the resistance between the collector terminal and the gate terminal. This is called the channel resistance, and it determines the amount of current that flows through the transistor.When the voltage at the gate terminal is higher than the voltage of the collector terminal, the transistor is said to be in an "on" state. When the voltage at the gate terminal is lower than the voltage of the collector terminal, the transistor is said to be in an "off" state. The IGBT module also includes a fast recovery diode, which provides protection against transient overvoltages by redirecting the current when the voltage exceeds the breakdown voltage.

Conclusion

In conclusion, the IRGIB4615DPBF is a high current and high voltage single IGBT module, designed to provide a fast and reliable solution for a range of different applications. It is suitable for motor control, welding and AC/DC power converters, due to its high switching capability, fast switching speed, high power density and high current density, as well as its low on-state voltage drop and low gate charge. The internal fast recovery diode also provides protection against transient overvoltages.

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