IRGR2B60KDTRPBF Discrete Semiconductor Products

Switching Energy:	74µJ (on), 39µJ (off)
Base Part Number:	IRGR2B60
Supplier Device Package:	D-Pak
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Reverse Recovery Time (trr):	68ns
Test Condition:	400V, 2A, 100 Ohm, 15V
Td (on/off) @ 25°C:	11ns/150ns
Gate Charge:	12nC
Input Type:	Standard
Series:	--
Power - Max:	35W
Vce(on) (Max) @ Vge, Ic:	2.25V @ 15V, 2A
Current - Collector Pulsed (Icm):	8A
Current - Collector (Ic) (Max):	6.3A
Voltage - Collector Emitter Breakdown (Max):	600V
IGBT Type:	NPT
Moisture Sensitivity Level (MSL):	--
Part Status:	Last Time Buy
Lead Free Status / RoHS Status:	--
Packaging:	Tape & Reel (TR)

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Introduction

The IRGR2B60KDTRPBF is an IGBT transistor that provides features such as low nose level, and excellent DC and AC characteristics. This transistor is suitable for applications in telecommunications, consumer electronics, automotive, lighting, and industrial automation and more.

Application Field and Working Principle

The IRGR2B60KDTRPBF is an IGBT (Insulated Gate Bipolar Transistor) which integrates an N-channel Metal-Oxide-Semiconductor field-effect transistor (MOSFET) and a PNP bipolar junction transistor (BJT). It is a voltage-controlled four-layer device composed of a gate, a dielectric layer, an N-type drift layer, and a P+ Collector layer. The voltage-controlled gate allows the device to be driven like a MOSFET. The BJT structure gives the IGBT additional current-carrying capacity. This particular device is primarily used for medium to high-power switching applications in many industries, such as telecommunications, consumer electronics, automotive, lighting, and industrial automation. It can be used for a range of applications, including high-efficiency switching for DC-DC converters, PFC (Power Factor Correction) applications, lighting, and motor controls.The IRGR2B60KDTRPBF is capable of operating at temperatures up to 150°C and is rated as able to handle up to 600V motor applications. Additionally, it is available in a variety of packages, with TO-220, TO-220F, and TO-247 packages offering different mounting options.The IRGR2B60KDTRPBF boasts a maximum current rating of 60A, with a maximum collector-emitter voltage of 600V. It exhibits a decrease in switching losses due to its low junction capacitance. Furthermore, the device also has a low turn-on and a turn-off times of 8.4ns and 15.4ns respectively, allowing for a high frequency of operation. The device is typically used in half-bridge, full-bridge, and chopper circuits as a switch. When in the on-state, the current flow is from Collector to Emitter. By driving negative gate voltage, the device turns off and the current stops flowing from Collector to Emitter. The voltage applied to the Gate can vary based on different applications, with a standard range going from -4V to -20V for faster switching. To enhance the durability of the device, it is recommended to incorporate a snubber circuit, which helps to limit the dV/dt rate and reduce the switching stress experienced by the device. The snubber circuit allows the energy transmitted by the voltage spike to be absorbed by a diode, capacitor and resistor connected in parallel to the device. All in all, the IRGR2B60KDTRPBF is an excellent choice for switching applications due to its high-power capability, low junction capacitance, and exceptional current handling ability. Its wide array of applications, benefits, and features make it an ideal choice for almost any switching application.

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