IRGR4610DTRPBF Discrete Semiconductor Products

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IRGR4610DTRPBF

The IRGR4610DTRPBF is a trench gate IGBT transistor. It is made from silicon with a single gate. The transistor is designed for use in applications requiring high-speed switching, including bridge rectifier applications.

Applications

The IRGR4610DTRPBF is designed for use in high-speed switching applications, such as full bridges, half bridges, and voltage regulators. It can be used in automotive, industrial and consumer applications. It can also be used in high performance switching applications.

Working Principle

The IRGR4610DTRPBF is a discrete transistor constructed of a gate, a base and an emitter. It has a high current rating of 15A and a breakdown voltage of 600V. When a voltage is applied to the gate, it opens the IGBT, creating a conduction channel between the emitter and the collector. The current flows through the transistor, providing an electrical output. The transistor can be used for high-speed switching applications.

Features

The IRGR4610DTRPBF features a low latching energy of 4mJ, a low noise capability of 35dB and a wide range of temperature operating ranges from -55°C to 175°C. It has a low EMI radiation level and high speed operation compared to other transistors.

Advantages

The IRGR4610DTRPBF transistor offers several advantages for high-speed switching applications. It has a high current rating, a wide temperature range and low noise capability. It is also low cost and has a low EMI radiation level. It provides a reliable switching operation and is easy to integrate into existing systems.

Conclusion

The IRGR4610DTRPBF transistor is a high-speed switching transistor designed for use in bridge rectifier applications. It has a high current rating, a wide temperature range and low noise capability. It is also low cost and has a low EMI radiation level. The transistor is reliable and easy to integrate into existing systems, making it a great choice for applications requiring high-speed switching.

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