IRGR4607DTRPBF Discrete Semiconductor Products

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The IRGR4607DTRPBF is part of Infineon\'s new Smart Power family, specifically designed as an IGBT (Insulated Gate Bipolar Transistor) with a single-chip construction. It features a gate driver integrated into the same package and offers several advantages, including improved longevity and reliability.

In general, IGBTs are ideal for power conditioning applications, and the IRGR4607DTRPBF is no exception. It is well-suited for diode bridge converters, soft-switched power supplies, motor control systems, and power conditioning applications.

The IRGR4607DTRPBF has peak current ratings of 4 A, 5 A, and 6 A, with a peak voltage rating of 600 V. The maximum junction temperature this product can operate in is 150 °C, and its on-state resistance is as low as 5.3 mΩ, further showing its suitability for high-efficiency applications with low-power losses.

Beyond the physical characteristics of the IRGR4607DTRPBF, the integrated driver offers a true MOSFET-level drive capability, allowing it to operate at up to 3 MHz with frequencies up to double that of other IGBTs. Additionally, the built-in short-circuit protection prevents damage to the chip during fault currents, and a latch-up protection feature provides additional security.

To understand the working principle of the IRGR4607DTRPBF, it is important to know how an IGBT works. An IGBT consists of two junctions, an insulated-gate and a bipolar junction, which are connected in anti-parallel. This allows the IGBT to function both as a MOSFET (Metal Oxide Semiconductor Field Effect Transistor) and a BJT (Bipolar Junction Transistor), making it well suited for hybrid amplifiers.

When the base voltage of an IGBT is high, electrons flow through the MOS channel between the source and drain, creating an insulated gate. This decreases resistance and allows current to flow through the switch with minimal losses. When the base voltage is low, the MOS channel is cut off, turning the device off and preventing current flow. The BJT then shorts the source and the drain, acting as an diode and protecting the transistor from excess current.

In conclusion, the IRGR4607DTRPBF is a high-performance IGBT designed with a single-chip construction and integrated driver for maximum efficiency and reliability. It is ideally suited for power conditioning applications that require high current and low power losses, and its built-in protections make it even more secure. Furthermore, its working principle helps to explain its functionality, as well as that of other IGBTs.

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