IRGR4610DTRRPBF

Switching Energy:	56µJ (on), 122µJ (off)
Supplier Device Package:	D-Pak
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type:	Surface Mount
Operating Temperature:	-40°C ~ 175°C (TJ)
Reverse Recovery Time (trr):	74ns
Test Condition:	400V, 6A, 47 Ohm, 15V
Td (on/off) @ 25°C:	27ns/75ns
Gate Charge:	13nC
Input Type:	Standard
Series:	--
Power - Max:	77W
Vce(on) (Max) @ Vge, Ic:	2V @ 15V, 6A
Current - Collector Pulsed (Icm):	18A
Current - Collector (Ic) (Max):	16A
Voltage - Collector Emitter Breakdown (Max):	600V
IGBT Type:	--
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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IGFET stands for “Insulated Gate Field-Effect Transistors”, and are commonly available in both unipolar and bipolar junction transistor forms. The IRGR4610DTRRPBF IGBT transistor is a single transistor, part of a larger class of devices referred to as “low voltage, high current devices.” This particular transistor is specifically designed for use in low voltage, high current control applications and has the following characteristics:

• Maximizes circuit efficiency and power density
• Continuous drain current of 46 amps
• Available in TO-220AB, D2PAK and SMD packages
• Controlled gate turn on and off times
• Rated drain-source voltage of 500V

The IRGR4610DTRRPBF is an essential component in many circuit designs due to its high current duties and ability to control turn on/off times. It is commonly used in data centers, communication systems, and heavy-duty industrial equipment due to its high-performance characteristics.

The Working Principle of IRGR4610DTRRPBF

The IRGR4610DTRRPBF works by using a voltage applied to its gate terminal, which can either increase or decrease the current that passes from the drain to the source. This voltage-controlled current flow is known as the “Field Effect”, which is how IGBTs derive their name. By controlling the gate voltage, the current that flows through the IRGR4610DTRRPBF can be easily adjusted, allowing the user to control the amount of current in the circuit with precision.When the gate voltage is at 0 volts, or ground, the drain-source voltage will be VDD (the power supply voltage) and the current will be 0. This state is known as the “OFF-State”, where no current is allowed to flow. As the gate voltage is increased, the drain-source voltage will gradually increase and allow current to flow. This state is known as the “ON-State”.In addition to the ability to control current flow, the IRGR4610DTRRPBF also offers extremely fast switching times. This is thanks to a built-in body diode, which allows the transistor to reverse current flow quickly when the gate voltage is switched from “OFF” to “ON” or vice versa. This helps to ensure that the circuit is protected against voltage/current fluctuations and avoids unwanted circuit activation.

Common Applications of IRGR4610DTRRPBF

Due to its fast switching times and high current capabilities, the IRGR4610DTRRPBF has become a popular choice for many circuit designers. Its high current capacity and fast switching times make it ideal for use in a variety of applications, including:

• Motor control: The IRGR4610DTRRPBF is often used to control the speed and direction of motors in various applications, such as industrial machines, robotics, and electric vehicles.
• Power conditioning: The IRGR4610DTRRPBF can be used to regulate power in various systems, such as solar energy harvesting, power conversion, and power factor correction circuits.
• High-frequency switching: Due to its fast switching times, the transistor is often used in high-frequency applications such as radio receivers, microwave amplifiers, and digital communication systems.
• Lighting applications: Due to its high current capacities, the IRGR4610DTRRPBF is often used in lighting circuits to switch on and off multiple light bulbs.

The IRGR4610DTRRPBF is a versatile and powerful transistor, allowing engineers to control high currents and switch quickly and efficiently. As such, it is an essential component for many circuit designs.

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