IRGR3B60KD2PBF Allicdata Electronics

IRGR3B60KD2PBF Discrete Semiconductor Products

Allicdata Part #:

IRGR3B60KD2PBF-ND

Manufacturer Part#:

IRGR3B60KD2PBF

Price: $ 0.51
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT 600V 7.8A 52W DPAK
More Detail: IGBT NPT 600V 7.8A 52W Surface Mount D-Pak
DataSheet: IRGR3B60KD2PBF datasheetIRGR3B60KD2PBF Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
1 +: $ 0.51000
10 +: $ 0.49470
100 +: $ 0.48450
1000 +: $ 0.47430
10000 +: $ 0.45900
Stock 1000Can Ship Immediately
$ 0.51
Specifications
Switching Energy: 62µJ (on), 39µJ (off)
Base Part Number: IRGR3B60KD2PBF
Supplier Device Package: D-Pak
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Reverse Recovery Time (trr): 77ns
Test Condition: 400V, 3A, 100 Ohm, 15V
Td (on/off) @ 25°C: 18ns/110ns
Gate Charge: 13nC
Input Type: Standard
Series: --
Power - Max: 52W
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 3A
Current - Collector Pulsed (Icm): 15.6A
Current - Collector (Ic) (Max): 7.8A
Voltage - Collector Emitter Breakdown (Max): 600V
IGBT Type: NPT
Moisture Sensitivity Level (MSL): --
Part Status: Last Time Buy
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

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The IRGR3B60KD2PBF is a high voltage and low gate charge IGBT designed for use in industrial applications. It can perform in a wide range of operating temperatures, from -55 degrees Celsius to 150 degrees Celsius. The IGBT has an operating current of 3A, collector-emitter voltage of 600V, gate-emitter voltage of 15V and a very low gate charge of 4.8nC. It is a great choice for industrial applications, due to its very low on-state power loss and high efficiency.

An IGBT, which stands for insulated gate bipolar transistor, is a type of transistor that combines the features of an MOSFET and a BJT. It is made up of a thin layer of silicon semiconductor material that forms the gate insulation, and a P-N semiconductor junction in which an insulated gate controls the flow of current. The insulated gate can be either “n-type” or “p-type”, depending on the structure of the semiconductor material.

An IGBT is a high-voltage switching device with a low gate charge and low on-state power loss. This makes it ideal for use in AC and DC circuits, as well as in high-frequency switching applications such as UPS, welding, 3-phase drives and motor control. It is also commonly used in automotive and lighting applications.

The IRGR3B60KD2PBF uses a standard N-type MOSFET gate structure, with a doubly silenced gate having two isolation layers. This allows for a much lower gate charge than a single layer structure, while also increasing the switching voltage of the transistor. This makes the IRGR3B60KD2PBF a great choice for high-voltage applications.

The IRGR3B60KD2PBF works by utilizing the gate voltage to control the current between the emitter and collector. When a positive gate voltage is applied, it creates a P-N semiconductor junction, which then allows for the current to flow from the emitter to the collector. The gate voltage can then be adjusted to regulate the amount of current that flows.

The IRGR3B60KD2PBF offers excellent performance in a wide range of industrial applications. It can be used in power control, AC/DC drives, welding and lighting applications, 3-phase drives, UPS and motor control. Its low gate charge and low on-state power loss makes it highly efficient and reliable for use in industrial applications.

The specific data is subject to PDF, and the above content is for reference

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