IS25CD025-JDLE Allicdata Electronics
Allicdata Part #:

IS25CD025-JDLE-ND

Manufacturer Part#:

IS25CD025-JDLE

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: ISSI, Integrated Silicon Solution Inc
Short Description: IC FLASH 256K SPI 100MHZ 8TSSOP
More Detail: FLASH Memory IC 256Kb (32K x 8) SPI 100MHz 8-TSSO...
DataSheet: IS25CD025-JDLE datasheetIS25CD025-JDLE Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 256Kb (32K x 8)
Clock Frequency: 100MHz
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP
Description

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IS25CD025-JDLE is a non-volatile memory which combines the features of EEPROM and Flash memory. It can store 256K bits of data in a single chip package. The device is available in two different technologies: CMOS and Open-Drain. The device is designed to offer a high performance, low power operation coupled with many features.

Application Field

The IS25CD025-JDLE is primarily used as a storage device in a wide range of systems and applications, such as mobile phones, digital cameras, digital video recorders, non-volatile memory for controllers, smart cards, and vehicle security systems.

The device is particularly useful in applications that require a large amount of reliable data storage. It is also used in systems that require low-power operation and high performance, such as wireless systems, automotive and industrial systems. The device is used in the field of communication, medical and aerospace, where consistent and reliable data storage is required.

Working Principle

The IS25CD025-JDLE uses a 2-State memory cell which consists of two transistors, each which can store a single bit of data. When the transistors are off, the data is stored in the cell. When the transistors are on, the data is then read from the cell.

The device also uses a charge pump circuit in order to access data from the cells. The charge pump circulates charges from the power supply of the chip in order to power up the memory cell. This powerful voltage supply is then used to shift data from the memory cell to the output port, and also to read data into the memory cell.

The device features a high number of write cycles and erase cycles, a wide temperature range, and an extended electromechanical life. The device is available in a range of packages, and the operating voltage is compatible with most of the microcontrollers and system buses.

The specific data is subject to PDF, and the above content is for reference

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