IS25LQ016-JNLE Allicdata Electronics
Allicdata Part #:

706-1190-ND

Manufacturer Part#:

IS25LQ016-JNLE

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: ISSI, Integrated Silicon Solution Inc
Short Description: IC FLASH 16M SPI 104MHZ 8SOIC
More Detail: FLASH - NOR Memory IC 16Mb (2M x 8) SPI - Quad I/O...
DataSheet: IS25LQ016-JNLE datasheetIS25LQ016-JNLE Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 16Mb (2M x 8)
Clock Frequency: 104MHz
Write Cycle Time - Word, Page: 2ms
Memory Interface: SPI - Quad I/O
Voltage - Supply: 2.3 V ~ 3.6 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Description

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Memory devices are widely used in a variety of applications and the IS25LQ016-JNLE is no exception. It is a non-volatile memory device with a host of applications ranging from consumer electronics, automotive and industrial environments, to healthcare and military applications.

The IS25LQ016-JNLE is a 16M-bit Standard Serial Flash Memory device. It is designed for high density and cost-effective Serial Peripheral Interface (SPI) bus applications with access times as fast as 75 nanoseconds. It features a 16-bit wide data bus with random access to memory cells, supporting advanced memory technologies up to four clock cycle write cycles. This device has an industry standard 3V power supply and is RoHS compliant for durability and reliability. It requires only a single power source for both read and write operations and has no need for external signal switching.

The IS25LQ016-JNLE works by utilizing flash memory technology to store data. Flash memory, also referred to as NAND memory is designed to store data in non-volatile silicon semiconductors. It utilizes a floating gate transistor with a dielectric layer sandwiched between the gate and the source and drain. When voltage is applied to the source and drain contact, it creates a threshold voltage and activates the floating gate transistor. This creates an electrical charge that helps keep data stored in the floating gate transistor even after the power has been removed.

The IS25LQ016-JNLE is capable of operating with a Read Command, Write Command, Program command, Read Status Register (SR) command, Erase Sector command and Reset command commands. Data is written sequentially by using the page write command, or directly to random locations using the program command. Data can be read using the sequential read command, or by using the fast read command. This device features a data security feature which allows data to be locked with passwords. It also has a power saving mode and can enter a deep power saving mode by using the Deep Power-down Command.

The IS25LQ016-JNLE is a durable and reliable memory device that is perfect for a variety of applications. Its fast operation speed and random data access make it ideal for projects where speed and storage capacity are required. Its integrated security feature and power down mode make it suitable for use in data sensitive and low voltage applications. The IS25LQ016-JNLE is a great choice for any application that requires fast, reliable and secure data storage.

The specific data is subject to PDF, and the above content is for reference

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