IS25LQ080-JNLE

IS25LQ080-JNLE is an 8-megabit non-volatile Serial Flash Memory. It uses an advanced controller and SST die, which makes it the ideal solution for applications that require low power operation, large memory density and fast read/write performance. IS25LQ080-JNLE is available in a small 8-pin SOIC and 8-pin UDFN package.

Application Field

IS25LQ080-JNLE is widely used in memory storage and booting media selection including data storage, code storage and image storage. It is an ideal solution for applications such as automotive instrument cluster, automotive infotainment, optical pick-up head memory, industrial controllers, industrial LED signboards, handheld data terminals and smart meter.

Working Principle

IS25LQ080-JNLE is a non-volatile serial memory which is controlled by an advanced 8-bit MCU. It has a small 8-pin SOIC package, so it is ideal for systems that require a small footprint. It enables high speed communication via the two-wire device bus and SPI protocol. The memory can be divided into multiple 4Kbyte sub-blocks for protection and separation of data.

The device contains a NV status register that can be used to determine the number of non-volatile bytes and store NV configuration settings that are required for operation. In addition, it is equipped with an internal voltage regulator, error detection circuitry, low power modes and an on-chip oscillator.

The IS25LQ080-JNLE includes an internal SRAM that can be used for temporary data storage. This SRAM is used as a buffer between the host and memory, allowing the memory to access data from the external device in parallel. This enables a faster data transfer rate between the host and the memory. Furthermore, the on-chip voltage regulator allows for stable operation in a wide range of supply voltage.

The IS25LQ080-JNLE leverages a built-in double-voltage security feature that prevents any data change operations from occurring if the power supply voltage dips below a specific voltage level. This helps protect memory from corrupting data due to unintended power supply fluctuations. The device also features error detection, which allows it to detect and locate errors in the data. This type of hybrid system combining SRAM, non-volatile memory, voltage regulator and error detection circuitry is critical for products that demand reliable data storage and fast read/write performance.