IS43DR81280C-3DBL

Series:	--
Packaging:	Tray
Part Status:	Active
Memory Type:	Volatile
Memory Format:	DRAM
Technology:	SDRAM - DDR2
Memory Size:	1Gb (128M x 8)
Clock Frequency:	333MHz
Write Cycle Time - Word, Page:	15ns
Access Time:	450ps
Memory Interface:	Parallel
Voltage - Supply:	1.7 V ~ 1.9 V
Operating Temperature:	0°C ~ 85°C (TC)
Mounting Type:	Surface Mount
Package / Case:	60-TFBGA
Supplier Device Package:	60-TWBGA (8x10.5)

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Introduction

IS43DR81280C-3DBL is a memory device designed to improve the performance of the system by providing fast access times and connectivity. It is based on the DDR3 SDRAM standard and is suitable for use in a wide range of applications. This paper will discuss the application fields and working principle of IS43DR81280C-3DBL.

Application Fields

IS43DR81280C-3DBL can be used in a variety of applications, such as:

• Computer memory: IS43DR81280C-3DBL is an ideal memory for PCs, providing high-speed data transfer rates and increased system performance.
• Graphic-intensive applications: IS43DR81280C-3DBL is perfect for video and graphics applications because of its fast refresh rates and low latency.
• High-performance computing: The device\'s high data transfer rate and access time make it an ideal choice for high-performance computing applications.
• Networking: IS43DR81280C-3DBL can be used in high-speed networks for increased throughput.
• Industrial control: IS43DR81280C-3DBL is the perfect memory for industrial control applications due to its low power consumption and high reliability.

Working Principle

IS43DR81280C-3DBL is based on the DDR3 SDRAM standard. It is a type of synchronous dynamic RAM that operates by transferring data between two separate clock edges: the rising edge (data in) and the falling edge (data out). The device consists of three primary components: DRAM cell array, command control logic, and input/output logic. The DRAM cell array is the core element of the device and consists of individual memory cells. The cells are arranged in rows and columns and can hold one bit of data each. The command control logic is responsible for controlling the commands sent to the memory cells, such as read/write commands, precharge commands, and refresh commands. The input/output logic is responsible for handling the data flow between the DRAM cells and the external components.In order to read from or write to a memory cell, the command control logic sends the appropriate command to the DRAM cell array, followed by the address of the cell. The data is then transferred between the cell and the input/output logic. In order to ensure that the data remains consistent, the device performs periodic refresh cycles to restore the contents of the cells.

Conclusion

IS43DR81280C-3DBL is an advanced memory device based on the DDR3 SDRAM standard. It is suitable for use in a wide range of applications, such as computer memory, graphical intensive applications, high-performance computing, networking, and industrial control. The device consists of a DRAM cell array, command control logic, and input/output logic, which all work together to provide fast access and data transfer.

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