IS43R16160F-6BLI Allicdata Electronics
Allicdata Part #:

706-1373-ND

Manufacturer Part#:

IS43R16160F-6BLI

Price: $ 4.68
Product Category:

Integrated Circuits (ICs)

Manufacturer: ISSI, Integrated Silicon Solution Inc
Short Description: IC DRAM 256M PARALLEL 60TFBGA
More Detail: SDRAM - DDR Memory IC 256Mb (16M x 16) Parallel 16...
DataSheet: IS43R16160F-6BLI datasheetIS43R16160F-6BLI Datasheet/PDF
Quantity: 29
1 +: $ 4.25250
Stock 29Can Ship Immediately
$ 4.68
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR
Memory Size: 256Mb (16M x 16)
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 700ps
Memory Interface: Parallel
Voltage - Supply: 2.3 V ~ 2.7 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 60-TFBGA
Supplier Device Package: 60-TFBGA (8x13)
Description

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The IS43R16160F-6BLI is a type of random access memory (RAM). It is used in a variety of electronic devices for a wide range of applications. The IS43R16160F-6BLI is a double data rate type three synchronous dynamic random access memory. It is widely used in embedded systems, communications applications and mission critical systems.

IS43R16160F-6BLI Application Field

IS43R16160F-6BLI is used in a variety of applications such as audio/video decoding, communications systems, gaming systems, embedded systems and mission critical systems. IS43R16160F-6BLI memory is used in high performance computing, high powered devices such as servers, routers,and switches. The IS43R16160F-6BLI memory is used in embedded devices such as cell phones, industrial controllers and automotive navigation systems.

IS43R16160F-6BLI is also used in commercial applications such as networking, online gaming, and enterprise storage applications. It is used in industrial applications such as factory automation, robotics, and machine vision. The IS43R16160F-6BLI memory is also used in medical equipment, automobiles and aircraft systems.

Working Principle of IS43R16160F-6BLI

IS43R16160F-6BLI is composed of an array of memory cells. Each memory cell consists of a capacitor and a transistor. The transistor is used to activate or deactivate the capacitor. The capacitor is used to store the data. Data is written to the memory cells by activating or deactivating the transistors, allowing electric charge to be stored in the capacitors.

When data needs to be read from a memory cell, the capacitor is activated, allowing the stored electric charge to be transferred to a sense amplifier. The sense amplifier then amplifies the electric charge, sending the data back to the system. IS43R16160F-6BLI uses this process to both read and write data to and from memories cells in a relatively short amount of time.

IS43R16160F-6BLI memory is an effective and reliable way to store data in electronic systems. It is fast, reliable and efficient, making it an ideal choice for a variety of applications. It is used in a variety of electronic devices, from servers and routers to cell phones and embedded systems.

The specific data is subject to PDF, and the above content is for reference

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