IS43DR86400E-25DBL Allicdata Electronics
Allicdata Part #:

706-1558-ND

Manufacturer Part#:

IS43DR86400E-25DBL

Price: $ 2.73
Product Category:

Integrated Circuits (ICs)

Manufacturer: ISSI, Integrated Silicon Solution Inc
Short Description: IC DRAM 512M PARALLEL 60TWBGA
More Detail: SDRAM - DDR2 Memory IC 512Mb (64M x 8) Parallel 40...
DataSheet: IS43DR86400E-25DBL datasheetIS43DR86400E-25DBL Datasheet/PDF
Quantity: 347
1 +: $ 2.48220
Stock 347Can Ship Immediately
$ 2.73
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR2
Memory Size: 512Mb (64M x 8)
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 400ns
Memory Interface: Parallel
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: 0°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 60-TFBGA
Supplier Device Package: 60-TWBGA (8x10.5)
Description

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IS43DR86400E-25DBL is a type of dynamic random access memory (DRAM), specifically a 64 MB DDR SDRAM. It is a 16384Mbit (2^24 x 8) with a total of 8192 rows of 512 bits x 8. The chip is organized in four partitions, each with 8k blocks of 512 bits and eight banks. This can in turn be divided up into four 2K blocks of 512 bits. It is designed to run at 400 MHz, making it one of the fastest types of DRAM currently available.The chip has a wide variety of applications including embedded systems, digital audio/video, automotive and mobile, server, industrial and networking. It is also suitable for high-performance networking applications and applications that require high bandwidth because of its fast speeds.Working principle:IS43DR86400E-25DBL DRAM works on the principle of storing data in the form of electrical charges on capacitors. The capacitors are made up of two plates set up in a stack and separated by an insulating substance. When a voltage is applied to one of the two plates, it collects electrons and stores electric charge. This charge represents data that is stored and remembered by the DRAM.When the reading or writing needs to happen, a voltage is applied to the plates. If the charge is greater than the applied voltage, then it is considered a ‘1’; if the charge is smaller, then it is a ‘0’. This is how the data is read and written back and forth between the DRAM and the microprocessor.The DRAM also has a built in refresh function that refreshes the data stored in memory by re-applying voltages at intervals. This ensures that the data stored stays consistent and doesn’t get corrupted or lost.Conclusion:IS43DR86400E-25DBL DRAM is a high-speed memory solution for many applications. It is organized in four partitions, each with 8k blocks of 512 bits and 8 banks. Its fast speeds make it suitable for high-performance networking applications and applications that require high bandwidth. It works on the principle of storing data in the form of electrical charges on capacitors, and it has a built in refresh function that refreshes data stored at intervals.

The specific data is subject to PDF, and the above content is for reference

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