IS43TR16640B-107MBL

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Today, dynamic random access memory (DRAM) is a common type of computer memory used in most desktop and laptop computers. The IS43TR16640B-107MBL is a type of DRAM that has recently been developed and is now being used for a variety of applications. This article will provide an overview of the IS43TR16640B-107MBL and its applications, as well as looking at its working principle.

IS43TR16640B-107MBL Memory Applications

The IS43TR16640B-107MBL DRAM is used in a variety of applications, including consumer electronics, gaming consoles, automotive systems, and other industrial applications. It is ideal for applications that require low power, high speed, and a large capacity of memory. Additionally, it offers high reliability and is cost-effective.

This DRAM can provide up to 8 Gb (1024Mbit) of memory, with a single in-line memory module (SIMM) having a width of 16 bits. Additionally, the IS43TR16640B-107MBL offers a high-speed data transfer rate of up to 400 MHz (800 Mbps). The memory also offers low power consumption and is able to operate at a low voltage of 1.8V.

It is well-suited for use in a variety of applications, including desktop PCs and laptops, consumer electronics devices, gaming consoles, automotive systems, and industrial applications. It can be used for a wide range of applications such as gaming, streaming video, image processing, and storing large amounts of data.

IS43TR16640B-107MBL Working Principle

The IS43TR16640B-107MBL is a type of dynamic random access memory (DRAM) that is based on a technology called “stacked cell”. The memory cell is constructed by stacking a single transistor on top of a capacitor. This stacking of components provides a high density of memory cells in a small physical space.

The data is stored in the cell in form of electrons charged in the capacitor. When a memory read cycle is performed, the voltage in the cell is applied to the transistor, which results in the electrons from the capacitor to be transferred to the other side of the transistor, thus providing a static voltage. This static voltage is interpreted as a digital value (1 or 0) depending on the amount of electrons transferred.

In addition to data storage, the DRAM cell also stores information about the data, such as the status information, which is referred to as the refresh counter. This refresh counter is used to track the amount of time since a cell is accessed, and is used to ensure the data stored in the cell is valid. If the data is not valid, the cell is marked as invalid, and the data is stored again, thus ensuring the data integrity of the memory.

The IS43TR16640B-107MBL DRAM offers both a high density of memory cells in a small physical size, as well as high speed and low power consumption. This makes it an ideal choice for a variety of applications, including consumer electronics, gaming systems, and industrial applications.

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